Photonic applications of thin film GaAs grown on silicon and insulating substrates by Molecular Beam Epitaxy
Thin film GaAs layers grown by Molecular Beam Epitaxy (MBE) on silicon, semi-insulating GaAs, and insulating substrates have been investigated for application to optoelectronic circuit technology. Photoconductivity measurements were conducted to characterize the electronic transport properties of the epitaxial layers in terms of carrier recombination lifetime and effective drift mobility. By varying the epitaxial growth parameters, it is possible to obtain various levels of material quality which are suitable for various components of optoelectronic integrated circuits. Results from photodetectors fabricated from GaAs grown on various layers will be presented. The fabrication of ridge waveguides from GaAs grown on silicon dioxide will also be described. Finally, a procedure for growing high quality GaAs for active devices in situ with layers for picosecond photoconductors will be discussed. 5 refs., 6 figs.
- Research Organization:
- Lawrence Livermore National Lab., CA (USA)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 6932390
- Report Number(s):
- UCRL-98370; CONF-8809123-1; ON: DE88016975
- Resource Relation:
- Conference: International congress on optical science and engineering, Hamburg, F.R. Germany, 22 Sep 1988; Other Information: Portions of this document are illegible in microfiche products
- Country of Publication:
- United States
- Language:
- English
Similar Records
Transient photoconductivity of low temperature GaAs grown by molecular beam epitaxy terahertz radar applications
Transient photoconductivity of low temperature GaAs grown by molecular beam epitaxy terahertz radar applications
Related Subjects
GALLIUM ARSENIDES
CRYSTAL GROWTH
LITHIUM
SURFACES
NIOBATES
SAPPHIRE
SILICON
SILICON OXIDES
ELECTRICAL INSULATORS
FABRICATION
LAYERS
MOLECULAR BEAM EPITAXY
PHOTOCONDUCTIVITY
PHOTODETECTORS
SUBSTRATES
THIN FILMS
WAVEGUIDES
ALKALI METALS
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CORUNDUM
ELECTRIC CONDUCTIVITY
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELEMENTS
EPITAXY
EQUIPMENT
FILMS
GALLIUM COMPOUNDS
METALS
MINERALS
NIOBIUM COMPOUNDS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
REFRACTORY METAL COMPOUNDS
SEMIMETALS
SILICON COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
360603* - Materials- Properties
360601 - Other Materials- Preparation & Manufacture