Fundamental studies of M-S and MIS solar cells on polycrystalline silicon. Final report, January 1, 1979-June 30, 1980. [Theoretical and experimental studies]
A new technique plotting the open-circuit voltage vs short-circuit current at varying illumination intensity is found to provide a better description of the solar cells when the n-value reflects the electrostatic potential drop across the interface layer in MIS structures. The majority carrier MIS cell (e.g., Au-SiO/sub 2/-nS) has been found to be less sensitive to the parameters of the oxide layer, but to have a somewhat lower efficiency than the minority-carrier cell (e.g., Al-SiO/sub 2/-pS). The tunneling barriers for holes are found to be consistently much larger than those for electrons. Experimental I-V and C-V characteristics of Schottky diodes with variable grain sizes have been measured. Analysis of the data indicate that the transport may be electrode-limited or bulk-limited depending on the average grain size. In addition, minority carrier injection dominates the dark current for sufficiently small grain size and large grain-boundary (GB) mismatch angle. Al-poly-Si Schottky-barrier diodes were fabricated on Wacker polycrystalline wafers. By examining the surface features of diodes on the same substrate, it was found that the high-angle grain boundary, distinguished by different etch pits on the two adjacent grains, has a strong influence on the current-voltage and low-frequency capacitance characteristics of the diode. A technology of forming Schottky barriers with high barrier height (0.93 eV) and low reverse saturation current (10/sup -5/ A/cm/sup 2/) was developed.
- Research Organization:
- Columbia Univ., New York (USA); Solar Energy Research Inst., Golden, CO (USA)
- DOE Contract Number:
- AC03-79ET23049
- OSTI ID:
- 6931977
- Report Number(s):
- DOE/ET/23049-T1
- Country of Publication:
- United States
- Language:
- English
Similar Records
Fundamental studies of M-S and MIS solar cells on polycrystalline silicon. Quarterly report, October 1-December 31, 1979
Fundamental studies of M-S and MIS solar cells on polycrystalline silicon. Quarterly report, January 1, 1979-September 30, 1979
Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
SCHOTTKY BARRIER DIODES
CHARGE TRANSPORT
ELECTRICAL PROPERTIES
SILICON SOLAR CELLS
CHARGE CARRIERS
DIFFUSION LENGTH
ELECTRONS
FILL FACTORS
GRAIN BOUNDARIES
GRAIN SIZE
HOLES
PERFORMANCE
POLYCRYSTALS
RECOMBINATION
SOLID STATE PHYSICS
CRYSTAL STRUCTURE
CRYSTALS
DIMENSIONS
DIRECT ENERGY CONVERTERS
ELEMENTARY PARTICLES
EQUIPMENT
FERMIONS
LENGTH
LEPTONS
MICROSTRUCTURE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PHYSICS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SIZE
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion
656000 - Condensed Matter Physics