Oxygen diffusion into oxygen-deficient Ba/sub 2/YCu/sub 3/O/sub 7-//sub x/ films during plasma oxidation
We studied the speed of oxygen diffusion into deoxygenated Ba/sub 2/ YCu/sub 3/ O/sub 7-//sub x/ films during plasma oxidation. The films were deoxygenated by annealing in N/sub 2/ or Ar and treated in an oxygen plasma. The sample was below 160 /sup 0/C during the plasma oxidation. The deoxygenated film was tetragonal and exhibited semiconductivity. Plasma oxidation changed the crystal structure of the film from tetragonal to orthorhombic, and restored superconductivity and metallic behavior in the oxygen deficient film. The change in composition variable x calculated from the weight gain during plasma oxidation was about 0.6. The effective diffusion constant for oxygen indiffusion estimated from the time dependence of weight gain was on the order of 10/sup -12/ cm/sup 2/ /s.
- Research Organization:
- Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
- OSTI ID:
- 6926811
- Journal Information:
- Appl. Phys. Lett.; (United States), Vol. 53:9
- Country of Publication:
- United States
- Language:
- English
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