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Title: Preparation of tin nitride via an amide imide intermediate

Journal Article · · Inorganic Chemistry; (United States)
DOI:https://doi.org/10.1021/ic00036a044· OSTI ID:6915911
 [1]
  1. Oak Ridge National Lab., TN (United States)

Binary nitrides of most elements can be prepared under appropriate conditions. These compounds show an extraordinary range of physical and chemical properties, more so than the oxides which they resemble in some respects. The nitrides are classified as ionic, mostly represented by groups 1 and 2; covalent, mostly represented by groups 3 and 4; and interstitial, formed by many metals. As the names imply, the properties of these materials are somewhat predictable, particularly those of the ionic nitrides, which are salt-like, and of the interstitial nitrides, which can be considered as metals with expanded lattices containing nitrogen in interstitial positions. The covalent nitrides show a wider range of properties. Some of the latter are solids with very high melting points and low electrical conductivities (such as BN, AlN, and Si[sub 3]N[sub 4]) while others are volatile or can form the basis of polymeric networks (such as (CN)[sub 2] or PN). In addition to these covalent nitrides, there are some that are semiconductors and have limited thermal stabilities (such as Cu[sub 3]N, Zn[sub 3]N[sub 2], and Sn[sub 3]N[sub 4]). It is the latter that appeared to be of interest because of potential applications in the development of electronic devices. Tin nitride was selected for study to expand the rather limited information published in the literature, none of which relates to the preparation of bulk material other than by glow-discharge methods. Also noted are discrepancies such as the reported electrical conductivities that differ by as much as 10[sup 5].

DOE Contract Number:
AC05-84OR21400
OSTI ID:
6915911
Journal Information:
Inorganic Chemistry; (United States), Vol. 31:10; ISSN 0020-1669
Country of Publication:
United States
Language:
English