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Title: Interfacial reactions in epitaxial Al/Ti[sub 1[minus][ital x]]Al[sub [ital x]]N (0[le][ital x][le]0. 2) model diffusion-barrier structures

Abstract

Transmission electron microscopy (TEM), cross-sectional TEM, scanning TEM with energy dispersive x-ray analysis, and Auger electron spectroscopy were used to investigate the nature of rate-controlling interfacial reactions in epitaxial Al/Ti[sub 1[minus][ital x]]Al[sub [ital x]]N thin-film couples. TiN and NaCl-structure Ti[sub 1[minus][ital x]]Al[sub [ital x]]N layers, 120 nm thick, with compositions [ital x]=0.1 and 0.2 were grown on MgO(001) substrates by ultrahigh vacuum reactive magnetron cosputter deposition in N[sub 2] discharges. Epitaxial Al films, 200-nm-thick, were then grown in Ar on top of the nitride layers during the same vacuum cycle. The reaction paths for Al/TiN and Al/(Ti,Al)N interactions during anneals at [ital T][sub [ital a]]=600 [degree]C for [ital t][sub [ital a]] up to 150 min was similar, but the extent of reaction was dramatically decreased by the substitution of (Ti,Al)N barrier layers for TiN. The primary mobile species during annealing was Ti which penetrated into the Al layers and reacted to form the ordered tetragonal intermetallic phase Al[sub 3]Ti while Al segregation resulted in the formation of a narrow metastable zincblende structure AlN layer at the Al/nitride interface. The room-temperature resistivity of 1-[mu]m-thick nitride layers varied from 15 [mu][Omega] cm for TiN to 60 [mu][Omega] cm for Ti[sub 0.8]Al[sub 0.2]N.

Authors:
; ; ;  [1]; ;  [2]
  1. Coordinated Science Laboratory, Materials Research Laboratory, and Department of Materials Science, University of Illinois, Urbana, Illinois 61801 (United States)
  2. Thin Film Division, Physics Department, Linkoeping University, S-581 83 Linkoeping (Sweden)
Publication Date:
OSTI Identifier:
6906726
DOE Contract Number:  
AC02-76ER01198
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States)
Additional Journal Information:
Journal Volume: 11:1; Journal ID: ISSN 0734-2101
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM; ATOM TRANSPORT; DIFFUSION; ALUMINIUM NITRIDES; TITANIUM; TITANIUM NITRIDES; ANNEALING; AUGER ELECTRON SPECTROSCOPY; ELECTRIC CONDUCTIVITY; INTERFACES; SPUTTERING; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; ALUMINIUM COMPOUNDS; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; ELECTRON SPECTROSCOPY; ELEMENTS; FILMS; HEAT TREATMENTS; METALS; MICROSCOPY; NEUTRAL-PARTICLE TRANSPORT; NITRIDES; NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; RADIATION TRANSPORT; SPECTROSCOPY; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; 360104* - Metals & Alloys- Physical Properties; 360204 - Ceramics, Cermets, & Refractories- Physical Properties

Citation Formats

Petrov, I, Mojab, E, Adibi, F, Greene, J E, Hultman, L, and Sundgren, J. Interfacial reactions in epitaxial Al/Ti[sub 1[minus][ital x]]Al[sub [ital x]]N (0[le][ital x][le]0. 2) model diffusion-barrier structures. United States: N. p., 1993. Web. doi:10.1116/1.578277.
Petrov, I, Mojab, E, Adibi, F, Greene, J E, Hultman, L, & Sundgren, J. Interfacial reactions in epitaxial Al/Ti[sub 1[minus][ital x]]Al[sub [ital x]]N (0[le][ital x][le]0. 2) model diffusion-barrier structures. United States. https://doi.org/10.1116/1.578277
Petrov, I, Mojab, E, Adibi, F, Greene, J E, Hultman, L, and Sundgren, J. Fri . "Interfacial reactions in epitaxial Al/Ti[sub 1[minus][ital x]]Al[sub [ital x]]N (0[le][ital x][le]0. 2) model diffusion-barrier structures". United States. https://doi.org/10.1116/1.578277.
@article{osti_6906726,
title = {Interfacial reactions in epitaxial Al/Ti[sub 1[minus][ital x]]Al[sub [ital x]]N (0[le][ital x][le]0. 2) model diffusion-barrier structures},
author = {Petrov, I and Mojab, E and Adibi, F and Greene, J E and Hultman, L and Sundgren, J},
abstractNote = {Transmission electron microscopy (TEM), cross-sectional TEM, scanning TEM with energy dispersive x-ray analysis, and Auger electron spectroscopy were used to investigate the nature of rate-controlling interfacial reactions in epitaxial Al/Ti[sub 1[minus][ital x]]Al[sub [ital x]]N thin-film couples. TiN and NaCl-structure Ti[sub 1[minus][ital x]]Al[sub [ital x]]N layers, 120 nm thick, with compositions [ital x]=0.1 and 0.2 were grown on MgO(001) substrates by ultrahigh vacuum reactive magnetron cosputter deposition in N[sub 2] discharges. Epitaxial Al films, 200-nm-thick, were then grown in Ar on top of the nitride layers during the same vacuum cycle. The reaction paths for Al/TiN and Al/(Ti,Al)N interactions during anneals at [ital T][sub [ital a]]=600 [degree]C for [ital t][sub [ital a]] up to 150 min was similar, but the extent of reaction was dramatically decreased by the substitution of (Ti,Al)N barrier layers for TiN. The primary mobile species during annealing was Ti which penetrated into the Al layers and reacted to form the ordered tetragonal intermetallic phase Al[sub 3]Ti while Al segregation resulted in the formation of a narrow metastable zincblende structure AlN layer at the Al/nitride interface. The room-temperature resistivity of 1-[mu]m-thick nitride layers varied from 15 [mu][Omega] cm for TiN to 60 [mu][Omega] cm for Ti[sub 0.8]Al[sub 0.2]N.},
doi = {10.1116/1.578277},
url = {https://www.osti.gov/biblio/6906726}, journal = {Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States)},
issn = {0734-2101},
number = ,
volume = 11:1,
place = {United States},
year = {1993},
month = {1}
}