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Title: Near-ir absorption in chemically vapor deposited [ital a]-SiN[sub [ital x]]:H films

Abstract

We have measured the optical-absorption properties of plasma-enhanced chemically vapor deposited films of hydrogenated amorphous silicon nitride ([ital a]-SiN[sub [ital x]]:H) over the energy range from 0.54 to 2 eV using photothermal deflection spectroscopy (PDS). Typical PDS spectra show a broad absorption tail with a large number of narrow absorption peaks. Using the phase sensitive feature of this spectroscopy we are able to separate nitride-related absorption from that arising from the fused quartz substrates. In addition to the broad, featureless band tail, whose magnitude is quite sensitive to optical excitation with light above [similar to]3.9 eV, we observe a number of narrow absorption peaks which are most likely overtones of localized vibrational modes. Specifically, we see peaks at 0.82 and 1.20 eV which we identify as the first and second harmonics of N-H stretching vibrations, and several other peaks whose origins remain undetermined. Prolonged UV excitation produces no detectable change in these vibrational modes, although large changes are seen in the underlying absorption tail. This reinforces previous suggestions that photoinduced changes in these films do not arise from rearrangement of the bonded hydrogen.

Authors:
 [1];  [2]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
  2. IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
Publication Date:
OSTI Identifier:
6906002
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Journal Article
Journal Name:
Physical Review, B: Condensed Matter; (United States)
Additional Journal Information:
Journal Volume: 46:23; Journal ID: ISSN 0163-1829
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON NITRIDES; ABSORPTION SPECTRA; AMORPHOUS STATE; CHEMICAL VAPOR DEPOSITION; HYDROGEN ADDITIONS; NEAR INFRARED RADIATION; THIN FILMS; VIBRATIONAL STATES; CHEMICAL COATING; DEPOSITION; ELECTROMAGNETIC RADIATION; ENERGY LEVELS; EXCITED STATES; FILMS; INFRARED RADIATION; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; RADIATIONS; SILICON COMPOUNDS; SPECTRA; SURFACE COATING; 360606* - Other Materials- Physical Properties- (1992-)

Citation Formats

Seager, C H, and Kanicki, J. Near-ir absorption in chemically vapor deposited [ital a]-SiN[sub [ital x]]:H films. United States: N. p., 1992. Web. doi:10.1103/PhysRevB.46.15163.
Seager, C H, & Kanicki, J. Near-ir absorption in chemically vapor deposited [ital a]-SiN[sub [ital x]]:H films. United States. doi:10.1103/PhysRevB.46.15163.
Seager, C H, and Kanicki, J. Tue . "Near-ir absorption in chemically vapor deposited [ital a]-SiN[sub [ital x]]:H films". United States. doi:10.1103/PhysRevB.46.15163.
@article{osti_6906002,
title = {Near-ir absorption in chemically vapor deposited [ital a]-SiN[sub [ital x]]:H films},
author = {Seager, C H and Kanicki, J},
abstractNote = {We have measured the optical-absorption properties of plasma-enhanced chemically vapor deposited films of hydrogenated amorphous silicon nitride ([ital a]-SiN[sub [ital x]]:H) over the energy range from 0.54 to 2 eV using photothermal deflection spectroscopy (PDS). Typical PDS spectra show a broad absorption tail with a large number of narrow absorption peaks. Using the phase sensitive feature of this spectroscopy we are able to separate nitride-related absorption from that arising from the fused quartz substrates. In addition to the broad, featureless band tail, whose magnitude is quite sensitive to optical excitation with light above [similar to]3.9 eV, we observe a number of narrow absorption peaks which are most likely overtones of localized vibrational modes. Specifically, we see peaks at 0.82 and 1.20 eV which we identify as the first and second harmonics of N-H stretching vibrations, and several other peaks whose origins remain undetermined. Prolonged UV excitation produces no detectable change in these vibrational modes, although large changes are seen in the underlying absorption tail. This reinforces previous suggestions that photoinduced changes in these films do not arise from rearrangement of the bonded hydrogen.},
doi = {10.1103/PhysRevB.46.15163},
journal = {Physical Review, B: Condensed Matter; (United States)},
issn = {0163-1829},
number = ,
volume = 46:23,
place = {United States},
year = {1992},
month = {12}
}