Growth and characterization of GaAs/Al/GaAs heterostructures

Journal Article · Sun Apr 15 00:00:00 EDT 1990 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.345035· OSTI ID:6904072

Bhattacharya, P; Oh, J E; Singh, J; Biswas, D ^[1]; Clarke, R; Passos, W D; Merlin, R; Mestres, N ^[2]; Chang, K H; Gibala, R ^[3]

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1. Department of Electrical Engineering, University of Michigan, Ann Arbor, Michigan 48109-2122 (USA) Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122 (USA)
2. Department of Physics, The University of Michigan, Ann Arbor, Michigan 48109-1120 (USA)
3. Department of Materials Science, University of Michigan, Ann Arbor, Michigan 48109-2136 (USA) Engineering, The University of Michigan, Ann Arbor, Michigan 48109-2136 (USA)

Theoretical and experimental aspects of the growth of GaAs/Al/GaAs heterostructures have been investigated. In these heterostructures the GaAs on top of the buried metal layer is grown by migration-enhanced epitaxy (MEE) at low temperatures (200 and 400 {degree}C) to provide a kinetic barrier to the outdiffusion of Al during superlayer growth. The crystallinity and orientation of the Al film itself deposited on (100) GaAs at {approx}0 {degree}C was studied by transmission electron diffraction, dark-field imaging, and x-ray diffraction measurements. It is found that the Al growth is polycrystalline with a grain size {approx}60 A and the preferred growth orientation is (111), which may be textured in plane but oriented out of plane. The quality of the GaAs superlayer grown on top of Al by MEE is very sensitive to the growth temperature. The layer grown at 400 {degree}C has good structural and optical quality, but is accompanied by considerable outdiffusion of Al at the Al-GaAs heterointerface. At 200 {degree}C, where the interface has good structural integrity, the superlayer exhibits twinning and no luminescence is observed.

• DOE Contract Number: FG02-86ER45250
• OSTI ID: 6904072
• Journal Information: Journal of Applied Physics; (USA), Vol. 67:8; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM
GROWTH
GALLIUM ARSENIDES
DIFFUSION
ELECTRON DIFFRACTION
EPITAXY
HETEROJUNCTIONS
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
POLYCRYSTALS
RAMAN SPECTRA
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
CRYSTALS
DIFFRACTION
ELECTRON MICROSCOPY
ELEMENTS
GALLIUM COMPOUNDS
JUNCTIONS
LUMINESCENCE
METALS
MICROSCOPY
PNICTIDES
SCATTERING
SEMICONDUCTOR JUNCTIONS
SPECTRA
360603* - Materials- Properties