A new method to analyze multiexponential transients for deep-level transient spectroscopy

Journal Article · Tue May 01 00:00:00 EDT 1990 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.344973· OSTI ID:6904064

Hanak, T R ^[1]; Ahrenkiel, R K; Dunlavy, D J; Bakry, A M ^[2]; Timmons, M L ^[3]

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1. University of Denver, Department of Physics, University Park, Denver, Colorado 80210 (USA)
2. Solar Energy Research Institute, 1617 Cole Boulevard, Golden, Colorado 80401 (USA)
3. Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194 (USA)

A new technique is introduced to analyze digitally recorded capacitive transients in order to determine the properties of deep states. Using a nonlinear double exponential fitting routine, it is shown that a two-trap model can be applied to the transient data. We determine the individual trap concentrations and produce two Arrhenius plots. The latter yields the thermal activation energies and capture cross sections of closely spaced traps. The excellent agreement between the new technique and the standard rate window technique is shown via a simulation deep-level transient spectroscopy spectrum. The new method is applied to Se-doped Al{sub {ital x}}Ga{sub 1{minus}{ital x}}As ({ital x}=0.19 and 0.27) grown by metal-organic chemical vapor deposition. The measured results for all deep states including the {ital DX} centers agree well with the values published in the literature.

• OSTI ID: 6904064
• Journal Information: Journal of Applied Physics; (USA), Vol. 67:9; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
ENERGY LEVELS
GALLIUM ARSENIDES
SELENIUM ADDITIONS
CAPACITANCE
CHEMICAL VAPOR DEPOSITION
DOPED MATERIALS
SIMULATION
TRANSIENTS
ALLOYS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
DEPOSITION
ELECTRICAL PROPERTIES
GALLIUM COMPOUNDS
MATERIALS
PHYSICAL PROPERTIES
PNICTIDES
SELENIUM ALLOYS
SURFACE COATING
360603* - Materials- Properties