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Title: Rapid thermal annealing of superconducting oxide precursor films on Si and SiO sub 2 substrates

Abstract

This patent describes a method of making a superconducting metal oxide film on a substrate selected from the group consisting of silicon and silicon dioxide. It comprises: depositing a thin film of a superconducting metal oxide precursor consisting essentially of R, Ba, Cu, and O by a physical deposition technique directly onto the substrate in a thickness between about 0.1 and 3 {mu}m to form a film/substrate composite, wherein R is selected from the group consisting of rare earth elements and yttrium, which precursor film can be annealed in an oxygen atmosphere to yield a superconducting metal oxide film; heating the film/substrate composite to a temperature between about 800{degrees} C. and 950{degrees} C. in less than about 10 seconds; maintaining the film/substrate composite at the temperature in an oxygen atmosphere for between about 5 and 25 seconds to anneal the film; and cooling the film/substrate composite to less than 300{degrees} C. in less than about 3 minutes.

Inventors:
; ;
Publication Date:
OSTI Identifier:
6900437
Patent Number(s):
US 4912087; A
Application Number:
PPN: US 7-181863A; TRN: 90-020912
Assignee:
Ford Motor Co., Dearborn, MI
Resource Type:
Patent
Resource Relation:
Patent File Date: 15 Apr 1988
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BARIUM OXIDES; DEPOSITION; COPPER OXIDES; RUTHENIUM OXIDES; SILICON; FABRICATION; SILICON OXIDES; SUBSTRATES; SUPERCONDUCTORS; ALKALINE EARTH METAL COMPOUNDS; BARIUM COMPOUNDS; CHALCOGENIDES; COPPER COMPOUNDS; ELEMENTS; OXIDES; OXYGEN COMPOUNDS; REFRACTORY METAL COMPOUNDS; RUTHENIUM COMPOUNDS; SEMIMETALS; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; 360201* - Ceramics, Cermets, & Refractories- Preparation & Fabrication

Citation Formats

Aslam, M, Logothetis, E M, and Soltis, R E. Rapid thermal annealing of superconducting oxide precursor films on Si and SiO sub 2 substrates. United States: N. p., 1990. Web.
Aslam, M, Logothetis, E M, & Soltis, R E. Rapid thermal annealing of superconducting oxide precursor films on Si and SiO sub 2 substrates. United States.
Aslam, M, Logothetis, E M, and Soltis, R E. 1990. "Rapid thermal annealing of superconducting oxide precursor films on Si and SiO sub 2 substrates". United States.
@article{osti_6900437,
title = {Rapid thermal annealing of superconducting oxide precursor films on Si and SiO sub 2 substrates},
author = {Aslam, M and Logothetis, E M and Soltis, R E},
abstractNote = {This patent describes a method of making a superconducting metal oxide film on a substrate selected from the group consisting of silicon and silicon dioxide. It comprises: depositing a thin film of a superconducting metal oxide precursor consisting essentially of R, Ba, Cu, and O by a physical deposition technique directly onto the substrate in a thickness between about 0.1 and 3 {mu}m to form a film/substrate composite, wherein R is selected from the group consisting of rare earth elements and yttrium, which precursor film can be annealed in an oxygen atmosphere to yield a superconducting metal oxide film; heating the film/substrate composite to a temperature between about 800{degrees} C. and 950{degrees} C. in less than about 10 seconds; maintaining the film/substrate composite at the temperature in an oxygen atmosphere for between about 5 and 25 seconds to anneal the film; and cooling the film/substrate composite to less than 300{degrees} C. in less than about 3 minutes.},
doi = {},
url = {https://www.osti.gov/biblio/6900437}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1990},
month = {3}
}