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Title: The influence of boron ion implantation on hydrogen blister formation in {ital n}-type silicon

Abstract

We have studied the formation of surface blisters in {l_angle}100{r_angle} {ital n}-type silicon following co-implantation with boron and hydrogen. The silicon substrates had four different {ital n}-type dopant levels, ranging from 10{sup 14} to 10{sup 19}&hthinsp;cm{sup {minus}3}. These substrates were implanted with 240 keV B{sup +} ions to a dose of 10{sup 15}&hthinsp;cm{sup {minus}2}, followed by a rapid thermal anneal at 900&hthinsp;{degree}C for 30{endash}60 s to force the boron atoms into substitutional lattice positions (activation). The samples were then implanted with 40 keV H{sup +} to a dose of 5{times}10{sup 16}&hthinsp;cm{sup {minus}2}. The implanted H{sup +} distribution peaks at a depth of about 475 nm, whereas the distribution in the implanted B{sup +} is broader and peaks at about 705 nm. To evaluate the role of the B{sup +} implantation, control samples were prepared by implanting with H{sup +} only. Following the H{sup +} implantation, all the samples were vacuum annealed at 390&hthinsp;{degree}C for 10 min. Blisters resulting from subsurface cracking at depths of about 400 nm, were observed in most of the B{sup +} implanted samples, but not in the samples implanted with H{sup +} only. This study indicates that the blistering results from the coalescence of implanted Hmore » into bubbles. The doping with B facilitates the short-range migration of the H interstitials and the formation of bubbles. A comparison of the observed crack depth with the depth of the damage peak resulting from the H{sup +} implantation (evaluated by the computer code TRIM) suggests that the nucleation of H bubbles occurs at the regions of maximum radiation damage, and not at the regions of maximum H concentration. For given values of B{sup +} and H{sup +} doping, the blister density was found to decrease with increasing {ital n}-type doping, when the boron is activated. Blister formation was also observed in B{sup +} implanted samples which had not been activated. In this case, the blister density was found to increase with increasing value of {ital n}-type doping. {copyright} {ital 1999 American Institute of Physics.}« less

Authors:
; ; ;  [1];  [2];  [3]
  1. Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
  2. Department of Electrical and Computer Engineering, University of California, Davis, California 95616 (United States)
  3. Philipps Universitaet Marburg, Fachbereich Chemie, Hans-Meerwein-Str., D-35032 Marburg (Germany)
Publication Date:
OSTI Identifier:
689939
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 86; Journal Issue: 8; Other Information: PBD: Oct 1999
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BORON; HYDROGEN; INTERSTITIALS; ION IMPLANTATION; SILICON; BORON IONS; HYDROGEN IONS; KEV RANGE 100-1000; ANNEALING; CRACKS; CRYSTAL DOPING; BUBBLES

Citation Formats

Hoechbauer, T, Walter, K C, Schwarz, R B, Nastasi, M, Bower, R W, and Ensinger, W. The influence of boron ion implantation on hydrogen blister formation in {ital n}-type silicon. United States: N. p., 1999. Web. doi:10.1063/1.371343.
Hoechbauer, T, Walter, K C, Schwarz, R B, Nastasi, M, Bower, R W, & Ensinger, W. The influence of boron ion implantation on hydrogen blister formation in {ital n}-type silicon. United States. doi:10.1063/1.371343.
Hoechbauer, T, Walter, K C, Schwarz, R B, Nastasi, M, Bower, R W, and Ensinger, W. Fri . "The influence of boron ion implantation on hydrogen blister formation in {ital n}-type silicon". United States. doi:10.1063/1.371343.
@article{osti_689939,
title = {The influence of boron ion implantation on hydrogen blister formation in {ital n}-type silicon},
author = {Hoechbauer, T and Walter, K C and Schwarz, R B and Nastasi, M and Bower, R W and Ensinger, W},
abstractNote = {We have studied the formation of surface blisters in {l_angle}100{r_angle} {ital n}-type silicon following co-implantation with boron and hydrogen. The silicon substrates had four different {ital n}-type dopant levels, ranging from 10{sup 14} to 10{sup 19}&hthinsp;cm{sup {minus}3}. These substrates were implanted with 240 keV B{sup +} ions to a dose of 10{sup 15}&hthinsp;cm{sup {minus}2}, followed by a rapid thermal anneal at 900&hthinsp;{degree}C for 30{endash}60 s to force the boron atoms into substitutional lattice positions (activation). The samples were then implanted with 40 keV H{sup +} to a dose of 5{times}10{sup 16}&hthinsp;cm{sup {minus}2}. The implanted H{sup +} distribution peaks at a depth of about 475 nm, whereas the distribution in the implanted B{sup +} is broader and peaks at about 705 nm. To evaluate the role of the B{sup +} implantation, control samples were prepared by implanting with H{sup +} only. Following the H{sup +} implantation, all the samples were vacuum annealed at 390&hthinsp;{degree}C for 10 min. Blisters resulting from subsurface cracking at depths of about 400 nm, were observed in most of the B{sup +} implanted samples, but not in the samples implanted with H{sup +} only. This study indicates that the blistering results from the coalescence of implanted H into bubbles. The doping with B facilitates the short-range migration of the H interstitials and the formation of bubbles. A comparison of the observed crack depth with the depth of the damage peak resulting from the H{sup +} implantation (evaluated by the computer code TRIM) suggests that the nucleation of H bubbles occurs at the regions of maximum radiation damage, and not at the regions of maximum H concentration. For given values of B{sup +} and H{sup +} doping, the blister density was found to decrease with increasing {ital n}-type doping, when the boron is activated. Blister formation was also observed in B{sup +} implanted samples which had not been activated. In this case, the blister density was found to increase with increasing value of {ital n}-type doping. {copyright} {ital 1999 American Institute of Physics.}},
doi = {10.1063/1.371343},
journal = {Journal of Applied Physics},
number = 8,
volume = 86,
place = {United States},
year = {1999},
month = {10}
}