skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Persistent photoconductivity in Ga{sub 1{minus}x}In{sub x}N{sub y}As{sub 1{minus}y}

Abstract

Electrical properties of unintentionally doped {ital p}-type Ga{sub 0.95}In{sub 0.05}N{sub 0.013}As{sub 0.987} quaternary alloys grown by metal{endash}organic vapor-phase epitaxy have been investigated by Hall-effect and photoconductivity measurements. Persistent photoconductivity (PPC) has been observed in this material at temperatures T{lt}320&hthinsp;K. The PPC buildup and decay kinetics have been systematically measured at different temperatures and photoexcitation energies and formulated in the context of lattice-relaxed deep levels (or {ital AX}-like centers). The parameters which characterize the {ital AX} centers in GaInNAs, namely, the thermal and optical ionization energies, hole capture barrier, and the Stokes shift, have been determined. Our results indicate that {ital AX}-like deep levels strongly influence the electronic properties of the GaInNAs quaternary system. {copyright} {ital 1999 American Institute of Physics.}

Authors:
; ;  [1]; ;  [2]
  1. Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States)
  2. National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)
Publication Date:
OSTI Identifier:
689923
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 75; Journal Issue: 13; Other Information: PBD: Sep 1999
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; INDIUM COMPOUNDS; GALLIUM NITRIDES; INDIUM NITRIDES; GALLIUM ARSENIDES; PHOTOCONDUCTIVITY; DOPED MATERIALS; VAPOR PHASE EPITAXY; HALL EFFECT; TEMPERATURE DEPENDENCE; ENERGY LEVELS; IONIZATION

Citation Formats

Li, J.Z., Lin, J.Y., Jiang, H.X., Geisz, J.F., and Kurtz, S.R. Persistent photoconductivity in Ga{sub 1{minus}x}In{sub x}N{sub y}As{sub 1{minus}y}. United States: N. p., 1999. Web. doi:10.1063/1.124865.
Li, J.Z., Lin, J.Y., Jiang, H.X., Geisz, J.F., & Kurtz, S.R. Persistent photoconductivity in Ga{sub 1{minus}x}In{sub x}N{sub y}As{sub 1{minus}y}. United States. doi:10.1063/1.124865.
Li, J.Z., Lin, J.Y., Jiang, H.X., Geisz, J.F., and Kurtz, S.R. Wed . "Persistent photoconductivity in Ga{sub 1{minus}x}In{sub x}N{sub y}As{sub 1{minus}y}". United States. doi:10.1063/1.124865.
@article{osti_689923,
title = {Persistent photoconductivity in Ga{sub 1{minus}x}In{sub x}N{sub y}As{sub 1{minus}y}},
author = {Li, J.Z. and Lin, J.Y. and Jiang, H.X. and Geisz, J.F. and Kurtz, S.R.},
abstractNote = {Electrical properties of unintentionally doped {ital p}-type Ga{sub 0.95}In{sub 0.05}N{sub 0.013}As{sub 0.987} quaternary alloys grown by metal{endash}organic vapor-phase epitaxy have been investigated by Hall-effect and photoconductivity measurements. Persistent photoconductivity (PPC) has been observed in this material at temperatures T{lt}320&hthinsp;K. The PPC buildup and decay kinetics have been systematically measured at different temperatures and photoexcitation energies and formulated in the context of lattice-relaxed deep levels (or {ital AX}-like centers). The parameters which characterize the {ital AX} centers in GaInNAs, namely, the thermal and optical ionization energies, hole capture barrier, and the Stokes shift, have been determined. Our results indicate that {ital AX}-like deep levels strongly influence the electronic properties of the GaInNAs quaternary system. {copyright} {ital 1999 American Institute of Physics.}},
doi = {10.1063/1.124865},
journal = {Applied Physics Letters},
number = 13,
volume = 75,
place = {United States},
year = {1999},
month = {9}
}