Ion-bombardment-enhanced etching of LiNbO/sub 3/ using damage profile tailoring

Journal Article · Sun Jan 01 00:00:00 EST 1989 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.343381· OSTI ID:6887419

Ashby, C I.H.; Arnold, G W; Brannon, P J

The production of a tailored implant-damage profile by sequential implantation of ions at several different energies rather than at a single energy can increase the depth and improve the wall smoothness of features produced by ion-bombardment-enhanced etching of a solid. This has been demonstrated in the enhanced etching of LiNbO/sub 3/ by HF following He/sup +/ implantation at several energies and fluences selected to produce a relatively flat damage depth profile. The use of lighter ions permits the etching of deeper features than is possible with heavier ions of the same energy. Buried microcracks are observed in heavily implanted Z-cut samples. Similar microcracks may play an important role in determining propagation losses in ion-implanted waveguides.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• OSTI ID: 6887419
• Journal Information: J. Appl. Phys.; (United States), Vol. 65:1
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
LITHIUM COMPOUNDS
PHYSICAL RADIATION EFFECTS
NIOBATES
CRACKS
DAMAGE
ETCHING
ION COLLISIONS
WAVEGUIDES
ALKALI METAL COMPOUNDS
COLLISIONS
NIOBIUM COMPOUNDS
OXYGEN COMPOUNDS
RADIATION EFFECTS
REFRACTORY METAL COMPOUNDS
SURFACE FINISHING
TRANSITION ELEMENT COMPOUNDS
360605* - Materials- Radiation Effects
656003 - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-)