Use of a carbon-alloyed graded-band-gap layer at the p/i interface to improve the photocharacteristics of amorphous silicon alloyed p-i-n solar cells prepared by photochemical vapor deposition

Journal Article · Wed Apr 15 00:00:00 EDT 1987 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.337806· OSTI ID:6886788

Kim, W Y; Tasaki, H; Konagai, M; Takahashi, K

Amorphous silicon alloyed p-i-n solar cells have been fabricated using a separate chamber photochemical vapor deposition system. The photocharacteristics of such cells have been modestly improved by the addition of a carbon-alloyed graded-band-gap layer at the p(a-SiC:H)/i(a-Si:H) heterointerface. The best efficiency obtained for a glass/TCO (transparent conductive oxide)/p(a-SiC:H)/i(a-Si:H)/n(..mu..c-Si:H)/metal structure of this type was 11.2% for a 3 x 3 mm/sup 2/ cell; other parameters were V/sub oc/ = 0.882 V, I/sub sc/ = 18.05 mA/cm/sup 2/, and a fill factor (FF) of 0.702.

• Research Organization: Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ohokayama, Meguroku, Tokyo 152, Japan
• OSTI ID: 6886788
• Journal Information: J. Appl. Phys.; (United States), Vol. 61:8
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SILICON
CHEMICAL VAPOR DEPOSITION
SILICON SOLAR CELLS
EFFICIENCY
FABRICATION
PERFORMANCE
GLASS
HETEROJUNCTIONS
SILICON CARBIDES
CARBIDES
CARBON COMPOUNDS
CHEMICAL COATING
DEPOSITION
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON COMPOUNDS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING
140501* - Solar Energy Conversion- Photovoltaic Conversion