Electric-field dependent electroreflectance and photocurrent spectroscopy in InGaAs/InAlAs strained-layer superlattices

Conference · Mon Jan 01 00:00:00 EST 1990

OSTI ID:6885924

Fritz, I J; Klem, J F; Brennan, T M; Wendt, J R; Zipperian, T E

Strained-layer epitaxy provides unique flexibility in tailoring the physical properties of compound semiconductor quantum-well structures. For example, without constraints on lattice matching it is possible to vary bandgap by varying alloy composition in many material systems. Currently, InGaAs alloys are receiving much attention because their bandgaps span the near-infrared wavelength range of interest for optical communication. Sanders and Chang and Hong, et. al., have shown that superimposed HH and LH bandgaps lead to enhanced optical absorption at the bandgap due to (1) the addition of the two oscillator strengths and (2) an increase in the density of states due to the modified valence-band dispersion. These effects may enhance the performance of optoelectronic devices. In the following we consider the design of InGaAs/InAlAs strained quantum-well structures with wells in biaxial tension and bandgap energies near 0.80 eV (1.55 {mu}m wavelength). We present first some model calculations and then data on two-strained layer superlattice (SLS) structures, including results with applied electric field. 6 refs., 4 figs.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• Sponsoring Organization: DOE/DP
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6885924
• Report Number(s): SAND-90-1718C; CONF-901105-4; ON: DE90015698
• Resource Relation: Conference: Fall meeting of the Materials Research Society, Boston, MA (USA), 26 Nov - 1 Dec 1990
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
ELECTRONIC STRUCTURE
SUPERLATTICES
GALLIUM ARSENIDES
INDIUM ARSENIDES
ELECTRIC FIELDS
LAYERS
MATHEMATICAL MODELS
MOLECULAR BEAM EPITAXY
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
PNICTIDES
360603* - Materials- Properties
360602 - Other Materials- Structure & Phase Studies