Local bonding arrangements of boron in doped hydrogenated amorphous silicon
Analysis of boron-11 NMR line widths in films of boron-doped hydrogenated amorphous silicon yields structural information concerning coordination and nearest-neighbor bonding of the dopant atoms. A heavily doped (10 at. %, B) film exhibits two distinct boron sites, both of them being three-fold coordinated. A second sample containing 0.7 at.% B shows only one boron site, also threefold coordinated. Annealing studies of the latter sample suggest the formation of B-Si bonds as the hydrogen is driven off. The /sup 11/B linewidth of a compensated film (containing 0.7 at. % B and 0.6 at. % P) is comparable to that of the uncompensated sample. /sup 11/B spin-spin relaxation (T/sub 2/) measurements indicate that the boron sites are clustered in all three materials.
- Research Organization:
- U.S. Naval Research Laboratory, Washington, DC 20375
- DOE Contract Number:
- AI02-80CS83116
- OSTI ID:
- 6885613
- Journal Information:
- J. Appl. Phys.; (United States), Vol. 56:6
- Country of Publication:
- United States
- Language:
- English
Similar Records
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Related Subjects
BORON 11
NUCLEAR MAGNETIC RESONANCE
SILICON
CRYSTAL DOPING
CRYSTAL STRUCTURE
AMORPHOUS STATE
ANNEALING
BINDING ENERGY
CHEMICAL BONDS
DOPED MATERIALS
HYDROGENATION
IMPURITIES
LINE WIDTHS
SPIN-LATTICE RELAXATION
BORON ISOTOPES
CHEMICAL REACTIONS
ELEMENTS
ENERGY
HEAT TREATMENTS
ISOTOPES
LIGHT NUCLEI
MAGNETIC RESONANCE
MATERIALS
NUCLEI
ODD-EVEN NUCLEI
RELAXATION
RESONANCE
SEMIMETALS
STABLE ISOTOPES
360602* - Other Materials- Structure & Phase Studies