Radiative recombination of InP and In /SUB 1-x/ Ga /SUB x/ P (0 less than or equal to x less than or equal to 0. 03) epitaxial films grown by gas-phase epitaxy

Journal Article · Wed Oct 01 00:00:00 EDT 1986 · J. Appl. Spectrosc. (Engl. Transl.); (United States)

OSTI ID:6882784

Manego, S A; Bud'ko, T O; Gruzdev, Y A; Osinskii, V I; Tikhonenko, O Y

In this work the authors investigated the radiative recombination of InP and In /SUB 1-x/ Ga /SUB x/ P (O is less than x is less than 0.03) epitaxial films, which were obtained by gas-transport reactions in the Ga-In-AsH/sub 3/-PH/sub 3/-HCl-H/sub 2/ system near the binary compound InP. Epitaxial films of the InP and In /SUB 1-x/ Ga /SUB x/ P with thicknesses equal to 4-8 mu were grown on InP(100) and (310) substrates in a system with a vertical reactor. The composition of the In /SUB 1-x/ Ga /SUB x/ P epitaxial films was determined on an x-ray microanalyzer with an accuracy of + or - 5%. Investigations of the defect content and luminescence of gas-phase indium phosphide and In /SUB 1-x/ Ga /SUB x/ P (0 is less than x is less than 0.03) epitaxial films have shown that the minimum dislocation density is observed near x = 0.01 and that a structural defect, which may be associated with a phosphorus-vacancy-gallium-atom complex at an indium lattice point or a phosphorus-vacancy-interstitial-gallium-atom complex, forms in the 0.01 is less than x is less than 0.03 composition range. Diagrams are included.

• OSTI ID: 6882784
• Journal Information: J. Appl. Spectrosc. (Engl. Transl.); (United States), Vol. 44:4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM PHOSPHIDES
PHOTOLUMINESCENCE
RECOMBINATION
INDIUM PHOSPHIDES
CARRIER DENSITY
DISLOCATIONS
ENERGY GAP
INTERSTITIALS
LASER SPECTROSCOPY
THIN FILMS
VACANCIES
VAPOR PHASE EPITAXY
X-RAY EMISSION ANALYSIS
CHEMICAL ANALYSIS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
EPITAXY
FILMS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LINE DEFECTS
LUMINESCENCE
NONDESTRUCTIVE ANALYSIS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POINT DEFECTS
SPECTROSCOPY
360603* - Materials- Properties
360602 - Other Materials- Structure & Phase Studies