X-ray diffraction from Si/Ge layers: Diffuse scattering in the region of total external reflection

Journal Article · Sun Jan 15 00:00:00 EST 1995 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.51.2311· OSTI ID:6880366

Schlomka, J; Tolan, M; Schwalowsky, L; Seeck, O H; Stettner, J; Press, W ^[1]

---

1. Institut fuer Experimentalphysik, Christian-Albrechts-Universitaet Kiel, Olshausenstrasse 40-60, 24098 Kiel (Germany)

In this paper it is shown that diffuse-scattering experiments within the region of total external reflection can be explained quantitatively using the distorted-wave Born approximation for layer systems. Three Si/Ge samples with different degrees of complexity were investigated. The simultaneous analysis of the specular reflected intensity and the diffuse scattering leads to one consistent set of interface and layer parameters, which is able to fit both the shapes and the locations of all dynamic peaks in the off-specular scans and the characteristics of the reflected intensity. Therefore the distorted-wave Born approximation seems to give a correct and complete description of the diffuse scattering in the region of total external reflection.

• OSTI ID: 6880366
• Journal Information: Physical Review, B: Condensed Matter; (United States), Vol. 51:4; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GERMANIUM
REFLECTIVITY
SILICON
BORN APPROXIMATION
INTERFACES
LAYERS
X-RAY SPECTROSCOPY
ELEMENTS
METALS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
SEMIMETALS
SPECTROSCOPY
SURFACE PROPERTIES
360602* - Other Materials- Structure & Phase Studies
360606 - Other Materials- Physical Properties- (1992-)