Influence of interfacial contamination on the structure and barrier height of Cr/GaAs Schottky contacts

Journal Article · Mon Jan 23 00:00:00 EST 1989 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100968· OSTI ID:6876331

Liliental-Weber, Z; Newman, N; Washburn, J; Weber, E R; Spicer, W E

The structure of as-deposited and annealed Cr/GaAs Schottky contacts was investigated by high resolution and analytical electron microscopy. The Schottky barrier height for contacts prepared by cleavage and in situ metallization in ultrahigh vacuum was stable upon annealing up to 370 /sup 0/C in N/sub 2/. In contrast, the contacts prepared on air-exposed substrates show an increase of the barrier height by 80 meV during annealing in the same range of temperatures. Comparing these two types of contacts, distinct differences in the grain size, presence of an oxide layer at the interface, and change in stoichiometry in the substrate beneath the contact were detected.

• Research Organization: Department of Material Science and Mineral Engineering, University of California, Berkeley, California 94720 and Center for Advanced Materials, Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, California 94720
• OSTI ID: 6876331
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 54:4
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
CHROMIUM
ELECTRON MICROSCOPY
GRAIN SIZE
GALLIUM ARSENIDES
SCHOTTKY BARRIER DIODES
ELECTRICAL PROPERTIES
FABRICATION
ANNEALING
INTERFACES
STABILITY
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL STRUCTURE
ELEMENTS
GALLIUM COMPOUNDS
HEAT TREATMENTS
METALS
MICROSCOPY
MICROSTRUCTURE
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SIZE
TRANSITION ELEMENTS
420800* - Engineering- Electronic Circuits & Devices- (-1989)