skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Modeling of alpha-particle-induced soft error rate in DRAM

Abstract

Alpha-particle-induced soft error in 256M DRAM was numerically investigated. A unified model for alpha-particle-induced charge collection and a soft-error-rate simulator (SERS) was developed. The author investigated the soft error rate of 256M DRAM and identified the bit-bar mode as one of dominant modes for soft error. In addition, for the first time, it was found that trench-oxide depth has a significant influence on soft error rate, and it should be determined by the tradeoff between soft error rate and cell-to-cell isolation characteristics.

Authors:
 [1]
  1. Ewha Womans Univ., Seoul (Korea, Republic of). Dept. of Electronic Engineering
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
687475
Resource Type:
Journal Article
Journal Name:
IEEE Transactions on Electron Devices
Additional Journal Information:
Journal Volume: 46; Journal Issue: 9; Other Information: PBD: Sep 1999
Country of Publication:
United States
Language:
English
Subject:
44 INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS; ALPHA PARTICLES; PHYSICAL RADIATION EFFECTS; MATHEMATICAL MODELS; ERRORS; CHARGE COLLECTION; SEMICONDUCTOR STORAGE DEVICES

Citation Formats

Shin, H. Modeling of alpha-particle-induced soft error rate in DRAM. United States: N. p., 1999. Web. doi:10.1109/16.784184.
Shin, H. Modeling of alpha-particle-induced soft error rate in DRAM. United States. doi:10.1109/16.784184.
Shin, H. Wed . "Modeling of alpha-particle-induced soft error rate in DRAM". United States. doi:10.1109/16.784184.
@article{osti_687475,
title = {Modeling of alpha-particle-induced soft error rate in DRAM},
author = {Shin, H.},
abstractNote = {Alpha-particle-induced soft error in 256M DRAM was numerically investigated. A unified model for alpha-particle-induced charge collection and a soft-error-rate simulator (SERS) was developed. The author investigated the soft error rate of 256M DRAM and identified the bit-bar mode as one of dominant modes for soft error. In addition, for the first time, it was found that trench-oxide depth has a significant influence on soft error rate, and it should be determined by the tradeoff between soft error rate and cell-to-cell isolation characteristics.},
doi = {10.1109/16.784184},
journal = {IEEE Transactions on Electron Devices},
number = 9,
volume = 46,
place = {United States},
year = {1999},
month = {9}
}