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Title: InGaP/InGaAlP double-heterostructure and multiquantum-well laser diodes grown by molecular-beam epitaxy

Abstract

Room-temperature continuous-wave (cw) operation is achieved in the MBE (molecular-beam epitaxy)-grown InGaP/InGaAlP double-heterostructure (DH) visible laser diodes with a threshold current of 110 mA. The lasing wavelength and threshold current density under pulsed operation are 666 nm and as low as 3.9 kA/cm/sup 2/, respectively. This result is achieved by the introduction of H/sub 2/ into the growth chamber during growth, the continuous growth from one layer to the next layer, and the introduction of a GaAs buffer layer. InGaP/InGaAlP quantum well structures are also grown. From photoluminescence measurements, the conduction-band discontinuity ..delta..E/sub c/ is estimated to be 0.43 of the band-gap difference ..delta..E/sub g/. Furthermore, the multiquantum-well (MQW) structure is found to be stable under thermal treatment at temperatures as high as 750 /sup 0/C. Room-temperature pulsed operation of InGaP/InGaAlP MQW laser diodes is achieved for the first time. The lasing wavelength is 658 nm with a threshold current density of 7.6 kA/cm/sup 2/. cw operation is also achieved in the MQW laser diodes at -125 /sup 0/C.

Authors:
; ; ; ;
Publication Date:
Research Org.:
NTT Electrical Communications Laboratories, Atsugi, Kanagawa 243-01, Japan
OSTI Identifier:
6868300
Resource Type:
Journal Article
Journal Name:
J. Appl. Phys.; (United States)
Additional Journal Information:
Journal Volume: 61:5
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; ALUMINIUM PHOSPHIDES; ENERGY GAP; GALLIUM PHOSPHIDES; INDIUM PHOSPHIDES; SEMICONDUCTOR LASERS; FABRICATION; OPERATION; CURRENT DENSITY; EXPERIMENTAL DATA; FREQUENCY SELECTION; HETEROJUNCTIONS; MEDIUM TEMPERATURE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; THRESHOLD CURRENT; ALUMINIUM COMPOUNDS; CURRENTS; DATA; ELECTRIC CURRENTS; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INFORMATION; JUNCTIONS; LASERS; LUMINESCENCE; NUMERICAL DATA; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; 420300* - Engineering- Lasers- (-1989)

Citation Formats

Tanaka, H, Kawamura, Y, Nojima, S, Wakita, K, and Asahi, H. InGaP/InGaAlP double-heterostructure and multiquantum-well laser diodes grown by molecular-beam epitaxy. United States: N. p., 1987. Web. doi:10.1063/1.338067.
Tanaka, H, Kawamura, Y, Nojima, S, Wakita, K, & Asahi, H. InGaP/InGaAlP double-heterostructure and multiquantum-well laser diodes grown by molecular-beam epitaxy. United States. doi:10.1063/1.338067.
Tanaka, H, Kawamura, Y, Nojima, S, Wakita, K, and Asahi, H. Sun . "InGaP/InGaAlP double-heterostructure and multiquantum-well laser diodes grown by molecular-beam epitaxy". United States. doi:10.1063/1.338067.
@article{osti_6868300,
title = {InGaP/InGaAlP double-heterostructure and multiquantum-well laser diodes grown by molecular-beam epitaxy},
author = {Tanaka, H and Kawamura, Y and Nojima, S and Wakita, K and Asahi, H},
abstractNote = {Room-temperature continuous-wave (cw) operation is achieved in the MBE (molecular-beam epitaxy)-grown InGaP/InGaAlP double-heterostructure (DH) visible laser diodes with a threshold current of 110 mA. The lasing wavelength and threshold current density under pulsed operation are 666 nm and as low as 3.9 kA/cm/sup 2/, respectively. This result is achieved by the introduction of H/sub 2/ into the growth chamber during growth, the continuous growth from one layer to the next layer, and the introduction of a GaAs buffer layer. InGaP/InGaAlP quantum well structures are also grown. From photoluminescence measurements, the conduction-band discontinuity ..delta..E/sub c/ is estimated to be 0.43 of the band-gap difference ..delta..E/sub g/. Furthermore, the multiquantum-well (MQW) structure is found to be stable under thermal treatment at temperatures as high as 750 /sup 0/C. Room-temperature pulsed operation of InGaP/InGaAlP MQW laser diodes is achieved for the first time. The lasing wavelength is 658 nm with a threshold current density of 7.6 kA/cm/sup 2/. cw operation is also achieved in the MQW laser diodes at -125 /sup 0/C.},
doi = {10.1063/1.338067},
journal = {J. Appl. Phys.; (United States)},
number = ,
volume = 61:5,
place = {United States},
year = {1987},
month = {3}
}