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Title: InGaP/InGaAlP double-heterostructure and multiquantum-well laser diodes grown by molecular-beam epitaxy

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.338067· OSTI ID:6868300

Room-temperature continuous-wave (cw) operation is achieved in the MBE (molecular-beam epitaxy)-grown InGaP/InGaAlP double-heterostructure (DH) visible laser diodes with a threshold current of 110 mA. The lasing wavelength and threshold current density under pulsed operation are 666 nm and as low as 3.9 kA/cm/sup 2/, respectively. This result is achieved by the introduction of H/sub 2/ into the growth chamber during growth, the continuous growth from one layer to the next layer, and the introduction of a GaAs buffer layer. InGaP/InGaAlP quantum well structures are also grown. From photoluminescence measurements, the conduction-band discontinuity ..delta..E/sub c/ is estimated to be 0.43 of the band-gap difference ..delta..E/sub g/. Furthermore, the multiquantum-well (MQW) structure is found to be stable under thermal treatment at temperatures as high as 750 /sup 0/C. Room-temperature pulsed operation of InGaP/InGaAlP MQW laser diodes is achieved for the first time. The lasing wavelength is 658 nm with a threshold current density of 7.6 kA/cm/sup 2/. cw operation is also achieved in the MQW laser diodes at -125 /sup 0/C.

Research Organization:
NTT Electrical Communications Laboratories, Atsugi, Kanagawa 243-01, Japan
OSTI ID:
6868300
Journal Information:
J. Appl. Phys.; (United States), Vol. 61:5
Country of Publication:
United States
Language:
English