On the performance of selenium rich lead-salt heterostructure lasers with remote p-n junction

Journal Article · Thu Jan 01 00:00:00 EST 1987 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1987.1073194· OSTI ID:6868031

Rosman, R; Katzir, A; Norton, P; Bachem, K H; Preier, H M

In order to increase the operating temperature of lasers emitting in the mid-IR, various lead chalcogenide diode lasers have been fabricated and examined: Pb/sub 0.95/Sn/sub 0.05/Se/PbSe and PbSe/PbS double heterostructure and funnel-type Pb/sub 1-x/Eu/sub x/Se lasers (the Eu content in the cladding layers increased steadily from x = 0.01 near the active layer up to x = 0.03). All the lasers were grown by molecular beam epitaxy on PbSe substrates. The p-n junctions were located not on the (lattice mismatched) interfaces, but at various distances (2000-6000 A) within the confinement layer. The highest operation temperatures (CW operation up to 165 K at 5.3 ..mu..m and pulsed operation up to 220 K at 4.4 ..mu..m) were attained by the PbSe/Pb/sub 1-x/Eu/sub x/Se funnel-type laser. The experimental results were compared to theoretical computer-assisted calculations, which accounted in a self-consistent way for the distributions of light, charge carriers, and temperature within the lasers. The agreement between theory and measurements for the temperature dependence of the threshold current and wavelength and for maximal operation temperatures was quite good. The authors found that the main contributions to the current come from interface recombination and from overbarrier leakage of nonconfined carriers (both minority and majority). Ways to improve the lasers are discussed.

• Research Organization: School of Physics, Tel-Aviv Univ., Tel-Aviv
• OSTI ID: 6868031
• Journal Information: IEEE J. Quant. Electron.; (United States), Vol. QE23:1
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
FABRICATION
P-N JUNCTIONS
PERFORMANCE
CHARGE CARRIERS
COMPUTER CALCULATIONS
EUROPIUM SELENIDES
INTERMEDIATE INFRARED RADIATION
LAYERS
LEAD
LEAD SELENIDES
LEAD SULFIDES
LOW TEMPERATURE
PULSE TECHNIQUES
SELENIUM
TEMPERATURE CONTROL
TEMPERATURE DISTRIBUTION
TIN
WAVELENGTHS
CHALCOGENIDES
CONTROL
ELECTROMAGNETIC RADIATION
ELEMENTS
EUROPIUM COMPOUNDS
INFRARED RADIATION
JUNCTIONS
LASERS
LEAD COMPOUNDS
METALS
RADIATIONS
RARE EARTH COMPOUNDS
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SULFIDES
SULFUR COMPOUNDS
420300* - Engineering- Lasers- (-1989)