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Title: Analysis of submicron Cu{endash}Ta{endash}SiO{sub 2} structures by highly charged ion secondary ion mass spectroscopy

Abstract

We have analyzed wafers with submicron copper lines on Ta/SiO{sub 2}/Si by time-of-flight secondary ion mass spectrometry with highly charged projectiles. The goal of the study was to diagnose the effectiveness of different cleaning solutions during brush scrubbing after chemical mechanical polishing. The advantage of projectiles like Xe{sup 44+} lies in the fact that they produce up to three orders of magnitude more secondary ions than singly charge projectiles. Detection of molecular ions (e.g., Cu oxide, Cu hydrocarbon, and alumina ions) enables a detailed assessment of surface conditions on wafers. Analysis of correlations in secondary ion emission from individual impacts gives insight into the chemical structure and homogeneity on a length scale of about 10 nm. {copyright} {ital 1999 American Vacuum Society.}

Authors:
 [1];  [2];  [3]; ; ; ;  [1]
  1. Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)
  2. Charges Evans and Associates, Redwood City, California 94063 (United States)
  3. OnTrak Systems, Incorporated, Milpitas, California 95035 (United States)
Publication Date:
OSTI Identifier:
686532
Report Number(s):
CONF-990332-
Journal ID: JVTBD9; ISSN 0734-211X; TRN: 9920M0049
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
Additional Journal Information:
Journal Volume: 17; Journal Issue: 5; Conference: 1. international conference on advanced materials and processes for microelectronics, San Jose, CA (United States), 15-19 Mar 1999; Other Information: PBD: Sep 1999
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SURFACE CLEANING; COPPER; TANTALUM; SILICON OXIDES; MASS SPECTRA; INTEGRATED CIRCUITS; SEMICONDUCTOR DEVICES; CONNECTORS; MULTICHARGED IONS; CHEMICAL COMPOSITION

Citation Formats

Schenkel, T., Wu, K.J., Li, H., Newman, N., Barnes, A.V., McDonald, J.W., and Hamza, A.V. Analysis of submicron Cu{endash}Ta{endash}SiO{sub 2} structures by highly charged ion secondary ion mass spectroscopy. United States: N. p., 1999. Web. doi:10.1116/1.590913.
Schenkel, T., Wu, K.J., Li, H., Newman, N., Barnes, A.V., McDonald, J.W., & Hamza, A.V. Analysis of submicron Cu{endash}Ta{endash}SiO{sub 2} structures by highly charged ion secondary ion mass spectroscopy. United States. doi:10.1116/1.590913.
Schenkel, T., Wu, K.J., Li, H., Newman, N., Barnes, A.V., McDonald, J.W., and Hamza, A.V. Wed . "Analysis of submicron Cu{endash}Ta{endash}SiO{sub 2} structures by highly charged ion secondary ion mass spectroscopy". United States. doi:10.1116/1.590913.
@article{osti_686532,
title = {Analysis of submicron Cu{endash}Ta{endash}SiO{sub 2} structures by highly charged ion secondary ion mass spectroscopy},
author = {Schenkel, T. and Wu, K.J. and Li, H. and Newman, N. and Barnes, A.V. and McDonald, J.W. and Hamza, A.V.},
abstractNote = {We have analyzed wafers with submicron copper lines on Ta/SiO{sub 2}/Si by time-of-flight secondary ion mass spectrometry with highly charged projectiles. The goal of the study was to diagnose the effectiveness of different cleaning solutions during brush scrubbing after chemical mechanical polishing. The advantage of projectiles like Xe{sup 44+} lies in the fact that they produce up to three orders of magnitude more secondary ions than singly charge projectiles. Detection of molecular ions (e.g., Cu oxide, Cu hydrocarbon, and alumina ions) enables a detailed assessment of surface conditions on wafers. Analysis of correlations in secondary ion emission from individual impacts gives insight into the chemical structure and homogeneity on a length scale of about 10 nm. {copyright} {ital 1999 American Vacuum Society.}},
doi = {10.1116/1.590913},
journal = {Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena},
number = 5,
volume = 17,
place = {United States},
year = {1999},
month = {9}
}