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Title: Analysis of Joule heating in multilevel interconnects

Abstract

Metal Joule heating in interconnects is studied numerically. Representative models featuring multilevel interconnect structures (from single level to eight level) are used for the finite element analysis. Particular attention is devoted to the effects of current density, the number of conductor levels, and the materials used as the metallization and interlevel dielectrics. Transient heat conduction analyses are carried out to quantify the temperature rise. It is found that increasing the total number of metal levels and/or switching the dielectric from silicon oxide to polymer-based low-dielectric-constant materials can cause substantial temperature increases, which points out that interconnect Joule heating can become a reliability problem in future applications. The maximum temperature increases with the current density and the metal wiring density in an exponential manner. Incorporating low-{ital k} dielectrics based on an embedded insertion scheme can greatly relieve the heating problem. An example of reducing the temperature rise by adapting a cooling mechanism at the packaging level is also illustrated numerically. The effects of constant versus pulsed dc currents are discussed. {copyright} {ital 1999 American Vacuum Society.}

Authors:
 [1]
  1. Department of Mechanical Engineering, The University of New Mexico, Albuquerque, New Mexico 87131 (United States)
Publication Date:
OSTI Identifier:
686531
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
Additional Journal Information:
Journal Volume: 17; Journal Issue: 5; Other Information: PBD: Sep 1999
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; HEATING; TEMPERATURE DISTRIBUTION; ALUMINIUM; SILICON; COPPER; CONNECTORS; INTEGRATED CIRCUITS; FINITE ELEMENT METHOD; JOULE HEATING; CURRENT DENSITY; SILICON OXIDES; DIELECTRIC MATERIALS; PACKAGING; COOLING

Citation Formats

Shen, Y. Analysis of Joule heating in multilevel interconnects. United States: N. p., 1999. Web. doi:10.1116/1.590881.
Shen, Y. Analysis of Joule heating in multilevel interconnects. United States. doi:10.1116/1.590881.
Shen, Y. Wed . "Analysis of Joule heating in multilevel interconnects". United States. doi:10.1116/1.590881.
@article{osti_686531,
title = {Analysis of Joule heating in multilevel interconnects},
author = {Shen, Y.},
abstractNote = {Metal Joule heating in interconnects is studied numerically. Representative models featuring multilevel interconnect structures (from single level to eight level) are used for the finite element analysis. Particular attention is devoted to the effects of current density, the number of conductor levels, and the materials used as the metallization and interlevel dielectrics. Transient heat conduction analyses are carried out to quantify the temperature rise. It is found that increasing the total number of metal levels and/or switching the dielectric from silicon oxide to polymer-based low-dielectric-constant materials can cause substantial temperature increases, which points out that interconnect Joule heating can become a reliability problem in future applications. The maximum temperature increases with the current density and the metal wiring density in an exponential manner. Incorporating low-{ital k} dielectrics based on an embedded insertion scheme can greatly relieve the heating problem. An example of reducing the temperature rise by adapting a cooling mechanism at the packaging level is also illustrated numerically. The effects of constant versus pulsed dc currents are discussed. {copyright} {ital 1999 American Vacuum Society.}},
doi = {10.1116/1.590881},
journal = {Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena},
number = 5,
volume = 17,
place = {United States},
year = {1999},
month = {9}
}