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Title: Model etch profiles for ion energy distribution functions in an inductively coupled plasma reactor

Abstract

Rectangular trench profiles are modeled with analytic etch rates determined from measured ion distribution functions. The pattern transfer step for this plasma etch is for trilayer lithography. Argon and chlorine angular ion energy distribution functions measured by a spherical collector ring analyzer are fit to a sum of drifting Maxwellian velocity distribution functions with anisotropic temperatures. The fit of the model ion distribution functions by a simulated annealing optimization procedure converges adequately for only two drifting Maxwellians. The etch rates are proportional to analytic expressions for the ion energy flux. Numerical computation of the etch profiles by integration of the characteristic equations for profile points and connection of the profiles points is efficient. {copyright} {ital 1999 American Vacuum Society.}

Authors:
;  [1];  [2]
  1. Department of Electrical Engineering, Washington University, St. Louis, Missouri 63130 (United States)
  2. Laser, Optics, and Remote Sensing Department, Sandia National Laboratories, Albuquerque, New Mexico 87185-1423 (United States)
Publication Date:
OSTI Identifier:
686529
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
Additional Journal Information:
Journal Volume: 17; Journal Issue: 5; Other Information: PBD: Sep 1999
Country of Publication:
United States
Language:
English
Subject:
66 PHYSICS; PLASMA SIMULATION; ETCHING; ION DENSITY; ANGULAR DISTRIBUTION; PLASMA; ARGON; CHLORINE; VELOCITY; INTEGRATED CIRCUITS; OPTIMIZATION

Citation Formats

Chen, W., Abraham-Shrauner, B., and Woodworth, J.R. Model etch profiles for ion energy distribution functions in an inductively coupled plasma reactor. United States: N. p., 1999. Web. doi:10.1116/1.590873.
Chen, W., Abraham-Shrauner, B., & Woodworth, J.R. Model etch profiles for ion energy distribution functions in an inductively coupled plasma reactor. United States. doi:10.1116/1.590873.
Chen, W., Abraham-Shrauner, B., and Woodworth, J.R. Wed . "Model etch profiles for ion energy distribution functions in an inductively coupled plasma reactor". United States. doi:10.1116/1.590873.
@article{osti_686529,
title = {Model etch profiles for ion energy distribution functions in an inductively coupled plasma reactor},
author = {Chen, W. and Abraham-Shrauner, B. and Woodworth, J.R.},
abstractNote = {Rectangular trench profiles are modeled with analytic etch rates determined from measured ion distribution functions. The pattern transfer step for this plasma etch is for trilayer lithography. Argon and chlorine angular ion energy distribution functions measured by a spherical collector ring analyzer are fit to a sum of drifting Maxwellian velocity distribution functions with anisotropic temperatures. The fit of the model ion distribution functions by a simulated annealing optimization procedure converges adequately for only two drifting Maxwellians. The etch rates are proportional to analytic expressions for the ion energy flux. Numerical computation of the etch profiles by integration of the characteristic equations for profile points and connection of the profiles points is efficient. {copyright} {ital 1999 American Vacuum Society.}},
doi = {10.1116/1.590873},
journal = {Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena},
number = 5,
volume = 17,
place = {United States},
year = {1999},
month = {9}
}