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Title: Plasma nitridation of thin Si layers for GaAs dielectrics

Abstract

10{endash}30 {Angstrom} thick Si interface control layers (ICL) were deposited on GaAs epitaxial layers on GaAs substrates. These were then nitrided by exposure to an electron cyclotron resonance nitrogen plasma for varying times. The nitride thickness is shown to increase logarithmically with time. A model based on electron tunneling is proposed to explain the results. Capacitance{endash}voltage measurements on resulting dielectric layers showed that, under optimal conditions, results adequate to fabrication of high-performance field-effect transistors are possible. The ICL thickness cannot be reduced to zero by nitridation because of damage to the underlying GaAs. {copyright} {ital 1999 American Vacuum Society.}

Authors:
; ; ; ; ;  [1]
  1. Engineering Science Building, University of Illinois, Urbana, Illinois 61801 (United States)
Publication Date:
OSTI Identifier:
686528
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
Additional Journal Information:
Journal Volume: 17; Journal Issue: 5; Other Information: PBD: Sep 1999
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SILICON COMPOUNDS; GALLIUM ARSENIDES; PLASMA; NITRIDATION; SILICON; THIN FILMS; INTERFACES; FIELD EFFECT TRANSISTORS

Citation Formats

Wang, Z., Diatezua, D.M., Park, D., Chen, Z., Morkoc, H., and Rockett, A. Plasma nitridation of thin Si layers for GaAs dielectrics. United States: N. p., 1999. Web. doi:10.1116/1.590867.
Wang, Z., Diatezua, D.M., Park, D., Chen, Z., Morkoc, H., & Rockett, A. Plasma nitridation of thin Si layers for GaAs dielectrics. United States. doi:10.1116/1.590867.
Wang, Z., Diatezua, D.M., Park, D., Chen, Z., Morkoc, H., and Rockett, A. Wed . "Plasma nitridation of thin Si layers for GaAs dielectrics". United States. doi:10.1116/1.590867.
@article{osti_686528,
title = {Plasma nitridation of thin Si layers for GaAs dielectrics},
author = {Wang, Z. and Diatezua, D.M. and Park, D. and Chen, Z. and Morkoc, H. and Rockett, A.},
abstractNote = {10{endash}30 {Angstrom} thick Si interface control layers (ICL) were deposited on GaAs epitaxial layers on GaAs substrates. These were then nitrided by exposure to an electron cyclotron resonance nitrogen plasma for varying times. The nitride thickness is shown to increase logarithmically with time. A model based on electron tunneling is proposed to explain the results. Capacitance{endash}voltage measurements on resulting dielectric layers showed that, under optimal conditions, results adequate to fabrication of high-performance field-effect transistors are possible. The ICL thickness cannot be reduced to zero by nitridation because of damage to the underlying GaAs. {copyright} {ital 1999 American Vacuum Society.}},
doi = {10.1116/1.590867},
journal = {Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena},
number = 5,
volume = 17,
place = {United States},
year = {1999},
month = {9}
}