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Title: Spontaneous Ordering in Bulk GaN:Mg Samples

Abstract

Transmission electron microscopy evidence of spontaneous ordering in Mg-doped, bulk GaN crystals grown by a high pressure, high temperature process is reported for the first time. The ordering consists of Mg-rich planar defects formed on basal planes separated by 10thinspthinspnm and occurs only for growth with (000{ovr 1}) N polarity. The ordering leads to the formation of satellite diffraction spots dividing the (0001) reciprocal lattice distance into 20thinspthinspparts. This {open_quotes}microsuperlattice{close_quotes} can be described as polytypoids comprised of planar defects with some characteristics of inversion domain boundaries. {copyright} {ital 1999} {ital The American Physical Society}

Authors:
; ;  [1]; ;  [2]
  1. Lawrence Berkeley National Laboratory, m/s 62/203, Berkeley, California 94720 (United States)
  2. High Pressure Research Center Unipress, Polish Academy of Sciences, Warsaw (Poland)
Publication Date:
OSTI Identifier:
686486
Resource Type:
Journal Article
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 83; Journal Issue: 12; Other Information: PBD: Sep 1999
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM NITRATES; DOPED MATERIALS; MAGNESIUM ADDITIONS; ORDER-DISORDER TRANSFORMATIONS; TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL DEFECTS; ELECTRON DIFFRACTION; MICROSTRUCTURE; MONOCRYSTALS; GROWTH

Citation Formats

Liliental-Weber, Z., Benamara, M., Washburn, J., Grzegory, I., and Porowski, S. Spontaneous Ordering in Bulk GaN:Mg Samples. United States: N. p., 1999. Web. doi:10.1103/PhysRevLett.83.2370.
Liliental-Weber, Z., Benamara, M., Washburn, J., Grzegory, I., & Porowski, S. Spontaneous Ordering in Bulk GaN:Mg Samples. United States. doi:10.1103/PhysRevLett.83.2370.
Liliental-Weber, Z., Benamara, M., Washburn, J., Grzegory, I., and Porowski, S. Wed . "Spontaneous Ordering in Bulk GaN:Mg Samples". United States. doi:10.1103/PhysRevLett.83.2370.
@article{osti_686486,
title = {Spontaneous Ordering in Bulk GaN:Mg Samples},
author = {Liliental-Weber, Z. and Benamara, M. and Washburn, J. and Grzegory, I. and Porowski, S.},
abstractNote = {Transmission electron microscopy evidence of spontaneous ordering in Mg-doped, bulk GaN crystals grown by a high pressure, high temperature process is reported for the first time. The ordering consists of Mg-rich planar defects formed on basal planes separated by 10thinspthinspnm and occurs only for growth with (000{ovr 1}) N polarity. The ordering leads to the formation of satellite diffraction spots dividing the (0001) reciprocal lattice distance into 20thinspthinspparts. This {open_quotes}microsuperlattice{close_quotes} can be described as polytypoids comprised of planar defects with some characteristics of inversion domain boundaries. {copyright} {ital 1999} {ital The American Physical Society}},
doi = {10.1103/PhysRevLett.83.2370},
journal = {Physical Review Letters},
number = 12,
volume = 83,
place = {United States},
year = {1999},
month = {9}
}