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Title: Comment on {open_quotes}Theory of Metal-Insulator Transitions in Gated Semiconductors{close_quotes}

Abstract

A Comment on the Letter by Boris L. Altshuler and Dmitrii L. Maslov, Phys.thinspthinspRev.thinspthinspLett.thinspthinsp{bold 82}, 145 (1999). The authors of the Letter offer a Reply. {copyright} {ital 1999} {ital The American Physical Society}

Authors:
 [1];  [2];  [3]
  1. Physics Department, Northeastern University Boston, Massachusetts 02115 (United States)
  2. Physics Department City College of the City University of New York New York, New York 10031 (United States)
  3. Department of Physics, Columbia University New York, New York 10027 (United States)
Publication Date:
OSTI Identifier:
686478
Resource Type:
Journal Article
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 83; Journal Issue: 10; Other Information: PBD: Sep 1999
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; HETEROJUNCTIONS; ALUMINIUM ARSENIDES; ELECTRIC CONDUCTIVITY; MOSFET; TEMPERATURE DEPENDENCE; TRAPPED ELECTRONS

Citation Formats

Kravchenko, S.V., Sarachik, M.P., and Simonian, D. Comment on {open_quotes}Theory of Metal-Insulator Transitions in Gated Semiconductors{close_quotes}. United States: N. p., 1999. Web. doi:10.1103/PhysRevLett.83.2091.
Kravchenko, S.V., Sarachik, M.P., & Simonian, D. Comment on {open_quotes}Theory of Metal-Insulator Transitions in Gated Semiconductors{close_quotes}. United States. doi:10.1103/PhysRevLett.83.2091.
Kravchenko, S.V., Sarachik, M.P., and Simonian, D. Wed . "Comment on {open_quotes}Theory of Metal-Insulator Transitions in Gated Semiconductors{close_quotes}". United States. doi:10.1103/PhysRevLett.83.2091.
@article{osti_686478,
title = {Comment on {open_quotes}Theory of Metal-Insulator Transitions in Gated Semiconductors{close_quotes}},
author = {Kravchenko, S.V. and Sarachik, M.P. and Simonian, D.},
abstractNote = {A Comment on the Letter by Boris L. Altshuler and Dmitrii L. Maslov, Phys.thinspthinspRev.thinspthinspLett.thinspthinsp{bold 82}, 145 (1999). The authors of the Letter offer a Reply. {copyright} {ital 1999} {ital The American Physical Society}},
doi = {10.1103/PhysRevLett.83.2091},
journal = {Physical Review Letters},
number = 10,
volume = 83,
place = {United States},
year = {1999},
month = {9}
}