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Title: Electronic Structure of {open_quotes}Sequence Mutations{close_quotes} in Ordered GaInP{sub 2 } Alloys

Abstract

The electronic consequences of layer thickness fluctuations in CuPt-ordered GaInP{sub 2} (layer sequence Ga-In-Ga-In.thinsp.thinsp.)thinspthinspare investigated. We show that the formation of a {open_quotes}sequence mutated{close_quotes} Ga-In-In-Ga.thinsp.thinsp.thinspthinspregion creates a hole state h1 localized in the In-In double layer, while the electron state e1 is localized in the CuPt-ordered region. Thus, the system exhibits electron-hole {ital charge separation} in addition to spatial localization. This physical picture is preserved when the dimension of the mutated segment is reduced from 2D to 0D, resulting in disklike dot structures. Our theory explains the long-standing puzzle of the origin of the peculiar luminescence properties of ordered GaInP{sub 2} . {copyright} {ital 1999} {ital The American Physical Society}

Authors:
; ;  [1]
  1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
Publication Date:
OSTI Identifier:
686471
Resource Type:
Journal Article
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 83; Journal Issue: 10; Other Information: PBD: Sep 1999
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM PHOSPHIDES; INDIUM PHOSPHIDES; ELECTRONIC STRUCTURE; SUPERLATTICES; PHOTOLUMINESCENCE; MICROSTRUCTURE; THICKNESS; FLUCTUATIONS

Citation Formats

Mattila, T., Wei, S., and Zunger, A. Electronic Structure of {open_quotes}Sequence Mutations{close_quotes} in Ordered GaInP{sub 2 } Alloys. United States: N. p., 1999. Web. doi:10.1103/PhysRevLett.83.2010.
Mattila, T., Wei, S., & Zunger, A. Electronic Structure of {open_quotes}Sequence Mutations{close_quotes} in Ordered GaInP{sub 2 } Alloys. United States. doi:10.1103/PhysRevLett.83.2010.
Mattila, T., Wei, S., and Zunger, A. Wed . "Electronic Structure of {open_quotes}Sequence Mutations{close_quotes} in Ordered GaInP{sub 2 } Alloys". United States. doi:10.1103/PhysRevLett.83.2010.
@article{osti_686471,
title = {Electronic Structure of {open_quotes}Sequence Mutations{close_quotes} in Ordered GaInP{sub 2 } Alloys},
author = {Mattila, T. and Wei, S. and Zunger, A.},
abstractNote = {The electronic consequences of layer thickness fluctuations in CuPt-ordered GaInP{sub 2} (layer sequence Ga-In-Ga-In.thinsp.thinsp.)thinspthinspare investigated. We show that the formation of a {open_quotes}sequence mutated{close_quotes} Ga-In-In-Ga.thinsp.thinsp.thinspthinspregion creates a hole state h1 localized in the In-In double layer, while the electron state e1 is localized in the CuPt-ordered region. Thus, the system exhibits electron-hole {ital charge separation} in addition to spatial localization. This physical picture is preserved when the dimension of the mutated segment is reduced from 2D to 0D, resulting in disklike dot structures. Our theory explains the long-standing puzzle of the origin of the peculiar luminescence properties of ordered GaInP{sub 2} . {copyright} {ital 1999} {ital The American Physical Society}},
doi = {10.1103/PhysRevLett.83.2010},
journal = {Physical Review Letters},
number = 10,
volume = 83,
place = {United States},
year = {1999},
month = {9}
}