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Title: Birefringence in the transparency region of GaAs/AlAs multiple quantum wells

Abstract

Birefringence measurements for in-plane propagation of light below the absorption edge in GaAs/AlAs multiple quantum wells (MQW{close_quote}s) are reported for different well/barrier widths. A remarkable drop in the low-frequency limit of the birefringence has been observed for MQW structures with small periods and ascribed to the presence of local fields. The temperature dependence of the birefringence is also studied and complementary results in InP quantum dot structures are also presented. The latter exhibit a strong resonant birefringence, which can be explained by the reduced dimensionality in the joint density of states for optical transitions in the dots. {copyright} {ital 1999} {ital The American Physical Society}

Authors:
 [1]; ;  [2]; ;  [3]
  1. Department of Physics, the Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
  2. Centro Atomico Bariloche and Instituto Balseiro, Comision Nacional de Energia Atomica and Universidad Nacional de Cuyo, 8400-San Carlos de Bariloche, Ri Negro (Argentina)
  3. Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, D-70569 Stuttgart (Germany)
Publication Date:
OSTI Identifier:
686463
Resource Type:
Journal Article
Journal Name:
Physical Review, B: Condensed Matter
Additional Journal Information:
Journal Volume: 60; Journal Issue: 11; Other Information: PBD: Sep 1999
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; OPACITY; ALUMINIUM COMPOUNDS; GALLIUM ARSENIDES; ALUMINIUM ARSENIDES; BIREFRINGENCE; TEMPERATURE DEPENDENCE; ENERGY-LEVEL DENSITY; RESONANCE; LIGHT TRANSMISSION

Citation Formats

Sirenko, A.A., Etchegoin, P., Fainstein, A., Eberl, K., and Cardona, M. Birefringence in the transparency region of GaAs/AlAs multiple quantum wells. United States: N. p., 1999. Web. doi:10.1103/PhysRevB.60.8253.
Sirenko, A.A., Etchegoin, P., Fainstein, A., Eberl, K., & Cardona, M. Birefringence in the transparency region of GaAs/AlAs multiple quantum wells. United States. doi:10.1103/PhysRevB.60.8253.
Sirenko, A.A., Etchegoin, P., Fainstein, A., Eberl, K., and Cardona, M. Wed . "Birefringence in the transparency region of GaAs/AlAs multiple quantum wells". United States. doi:10.1103/PhysRevB.60.8253.
@article{osti_686463,
title = {Birefringence in the transparency region of GaAs/AlAs multiple quantum wells},
author = {Sirenko, A.A. and Etchegoin, P. and Fainstein, A. and Eberl, K. and Cardona, M.},
abstractNote = {Birefringence measurements for in-plane propagation of light below the absorption edge in GaAs/AlAs multiple quantum wells (MQW{close_quote}s) are reported for different well/barrier widths. A remarkable drop in the low-frequency limit of the birefringence has been observed for MQW structures with small periods and ascribed to the presence of local fields. The temperature dependence of the birefringence is also studied and complementary results in InP quantum dot structures are also presented. The latter exhibit a strong resonant birefringence, which can be explained by the reduced dimensionality in the joint density of states for optical transitions in the dots. {copyright} {ital 1999} {ital The American Physical Society}},
doi = {10.1103/PhysRevB.60.8253},
journal = {Physical Review, B: Condensed Matter},
number = 11,
volume = 60,
place = {United States},
year = {1999},
month = {9}
}