skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Magnetic-field-induced V-shaped quantized conductance staircase in a double-layer quantum point contact

Abstract

We show that the low-temperature conductance ({ital G}) of a quantum point contact consisting of ballistic tunnel-coupled double-layer quantum-well wires is modulated by an in-layer magnetic field {ital B} due to the anticrossing. {ital B} creates a V-shaped quantum staircase for {ital G}, causing it to decrease in steps of 2e{sup 2}/h to a minimum and then increase to a maximum, where {ital G} may saturate or decrease again at higher {ital B}`s. Relevance of the result to recent data is discussed. {copyright} {ital 1999} {ital The American Physical Society}

Authors:
 [1]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
Publication Date:
OSTI Identifier:
686458
Resource Type:
Journal Article
Journal Name:
Physical Review, B: Condensed Matter
Additional Journal Information:
Journal Volume: 60; Journal Issue: 11; Other Information: PBD: Sep 1999
Country of Publication:
United States
Language:
English
Subject:
66 PHYSICS; ELECTRIC CONDUCTIVITY; SEMICONDUCTOR JUNCTIONS; MAGNETIC FIELDS; TUNNEL EFFECT; MODULATION; QUANTIZATION; GALLIUM ARSENIDES; ALUMINIUM ARSENIDES

Citation Formats

Lyo, S.K. Magnetic-field-induced V-shaped quantized conductance staircase in a double-layer quantum point contact. United States: N. p., 1999. Web. doi:10.1103/PhysRevB.60.7732.
Lyo, S.K. Magnetic-field-induced V-shaped quantized conductance staircase in a double-layer quantum point contact. United States. doi:10.1103/PhysRevB.60.7732.
Lyo, S.K. Wed . "Magnetic-field-induced V-shaped quantized conductance staircase in a double-layer quantum point contact". United States. doi:10.1103/PhysRevB.60.7732.
@article{osti_686458,
title = {Magnetic-field-induced V-shaped quantized conductance staircase in a double-layer quantum point contact},
author = {Lyo, S.K.},
abstractNote = {We show that the low-temperature conductance ({ital G}) of a quantum point contact consisting of ballistic tunnel-coupled double-layer quantum-well wires is modulated by an in-layer magnetic field {ital B} due to the anticrossing. {ital B} creates a V-shaped quantum staircase for {ital G}, causing it to decrease in steps of 2e{sup 2}/h to a minimum and then increase to a maximum, where {ital G} may saturate or decrease again at higher {ital B}`s. Relevance of the result to recent data is discussed. {copyright} {ital 1999} {ital The American Physical Society}},
doi = {10.1103/PhysRevB.60.7732},
journal = {Physical Review, B: Condensed Matter},
number = 11,
volume = 60,
place = {United States},
year = {1999},
month = {9}
}