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Title: Hydrogen diffusion and mobile hydrogen in amorphous silicon

Abstract

Diffusion phenomena in hydrogenated amorphous silicon (a-Si:H) are modeled assuming that mobile H excited from Si-H bonds normally annihilates at dangling-bond defects, as in the {open_quotes}H collision{close_quotes} model of light-induced metastability. This diffusion model explains the long-standing puzzle of the doping dependence of the hydrogen diffusion coefficient D{sub H}. It also yields the magnitudes of the D{sub H} Arrhenius prefactors in doped and undoped a-Si:H. Mobile H diffuses over an energy barrier of about 0.3 eV; at room temperature, its diffusion rate is slightly greater than that of H in crystalline Si. {copyright} {ital 1999} {ital The American Physical Society}

Authors:
 [1]
  1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
Publication Date:
OSTI Identifier:
686457
Resource Type:
Journal Article
Journal Name:
Physical Review, B: Condensed Matter
Additional Journal Information:
Journal Volume: 60; Journal Issue: 11; Other Information: PBD: Sep 1999
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; AMORPHOUS STATE; SILICON; HYDROGEN; DIFFUSION; HYDROGENATION; CHEMICAL BONDS; DEFECTS; DOPED MATERIALS

Citation Formats

Branz, H.M. Hydrogen diffusion and mobile hydrogen in amorphous silicon. United States: N. p., 1999. Web. doi:10.1103/PhysRevB.60.7725.
Branz, H.M. Hydrogen diffusion and mobile hydrogen in amorphous silicon. United States. doi:10.1103/PhysRevB.60.7725.
Branz, H.M. Wed . "Hydrogen diffusion and mobile hydrogen in amorphous silicon". United States. doi:10.1103/PhysRevB.60.7725.
@article{osti_686457,
title = {Hydrogen diffusion and mobile hydrogen in amorphous silicon},
author = {Branz, H.M.},
abstractNote = {Diffusion phenomena in hydrogenated amorphous silicon (a-Si:H) are modeled assuming that mobile H excited from Si-H bonds normally annihilates at dangling-bond defects, as in the {open_quotes}H collision{close_quotes} model of light-induced metastability. This diffusion model explains the long-standing puzzle of the doping dependence of the hydrogen diffusion coefficient D{sub H}. It also yields the magnitudes of the D{sub H} Arrhenius prefactors in doped and undoped a-Si:H. Mobile H diffuses over an energy barrier of about 0.3 eV; at room temperature, its diffusion rate is slightly greater than that of H in crystalline Si. {copyright} {ital 1999} {ital The American Physical Society}},
doi = {10.1103/PhysRevB.60.7725},
journal = {Physical Review, B: Condensed Matter},
number = 11,
volume = 60,
place = {United States},
year = {1999},
month = {9}
}