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Title: Field and potential around local scatterers in thin metal films studied by scanning tunneling potentiometry

Abstract

We report the direct observation of electrochemical potential and local transport field variations near scatterers like grain boundaries, triple points, and voids in thin platinum films studied by scanning tunneling potentiometry. The field is highest at a void, followed by a triple point and a grain boundary. The local transport field near a void can even be four orders of magnitude higher than the macroscopic field, indicating that the void is the most likely place for an electromigration induced failure. The field build up for a particular type of scatterer depends on the grain connectivity. We estimate an average grain boundary reflection coefficient for the film from the temperature dependence of its resistivity. {copyright} {ital 1999 American Institute of Physics.}

Authors:
 [1];  [2]
  1. Department of Physics, Indian Institute of Science, Bangalore 560 012 (India)
  2. National Physical Laboratory, New Delhi 110 012 (India)
Publication Date:
OSTI Identifier:
686435
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 75; Journal Issue: 13; Other Information: PBD: Sep 1999
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; POTENTIAL SCATTERING; ELECTROPHORESIS; PLATINUM; THIN FILMS; POTENTIOMETRY; CRYSTAL DEFECTS; GRAIN BOUNDARIES; VOIDS; ELECTRIC CONDUCTIVITY; POLYCRYSTALS

Citation Formats

Ramaswamy, G., and Raychaudhuri, A.K. Field and potential around local scatterers in thin metal films studied by scanning tunneling potentiometry. United States: N. p., 1999. Web. doi:10.1063/1.124892.
Ramaswamy, G., & Raychaudhuri, A.K. Field and potential around local scatterers in thin metal films studied by scanning tunneling potentiometry. United States. doi:10.1063/1.124892.
Ramaswamy, G., and Raychaudhuri, A.K. Wed . "Field and potential around local scatterers in thin metal films studied by scanning tunneling potentiometry". United States. doi:10.1063/1.124892.
@article{osti_686435,
title = {Field and potential around local scatterers in thin metal films studied by scanning tunneling potentiometry},
author = {Ramaswamy, G. and Raychaudhuri, A.K.},
abstractNote = {We report the direct observation of electrochemical potential and local transport field variations near scatterers like grain boundaries, triple points, and voids in thin platinum films studied by scanning tunneling potentiometry. The field is highest at a void, followed by a triple point and a grain boundary. The local transport field near a void can even be four orders of magnitude higher than the macroscopic field, indicating that the void is the most likely place for an electromigration induced failure. The field build up for a particular type of scatterer depends on the grain connectivity. We estimate an average grain boundary reflection coefficient for the film from the temperature dependence of its resistivity. {copyright} {ital 1999 American Institute of Physics.}},
doi = {10.1063/1.124892},
journal = {Applied Physics Letters},
number = 13,
volume = 75,
place = {United States},
year = {1999},
month = {9}
}