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Title: Structural and optical quality of GaN/metal/Si heterostructures fabricated by excimer laser lift-off

Abstract

Gallium nitride (GaN) thin films grown on sapphire substrates were successfully bonded and transferred onto Si substrates using a Pd{endash}In metallic bond. After bonding, a single 600 mJ/cm{sup 2}, 38 ns KrF (248 nm) excimer laser pulse was directed through the transparent sapphire followed by a low-temperature heat treatment to remove the substrate. Channeling-Rutherford backscattering measurements revealed the thickness of the defective interfacial region to be approximately 350 nm. The full width at half maximum, low-temperature (4 K), donor-bound exciton photoluminescence (PL) peak was larger by 25{percent} on the exposed interfacial layer compared to the original GaN surface. Ion milling of the exposed interface to a depth of 400 nm was found to remove the interfacial layer and associated defects. The minimum channeling yield and PL linewidths from the exposed interface were found to be comparable to those obtained from the original GaN surface after ion milling. {copyright} {ital 1999 American Institute of Physics.}

Authors:
; ; ;  [1]; ;  [2];  [3];  [4]
  1. Department of Materials Science and Mineral Engineering, University of California, Berkeley, California 94720-1760 (United States)
  2. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
  3. Applied Science and Technology Graduate Group, University of California, Berkeley, California 94720 (United States)
  4. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720-1772 (United States)
Publication Date:
OSTI Identifier:
686431
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 75; Journal Issue: 13; Other Information: PBD: Sep 1999
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; GALLIUM COMPOUNDS; GALLIUM NITRIDES; THIN FILMS; SILICON; HETEROJUNCTIONS; PALLADIUM; INDIUM; BONDING; LASER-RADIATION HEATING; PHOTOLUMINESCENCE; ION CHANNELING; RUTHERFORD SCATTERING; INTERFACES

Citation Formats

Wong, W.S., Cho, Y., Weber, E.R., Sands, T., Yu, K.M., Krueger, J., Wengrow, A.B., and Cheung, N.W. Structural and optical quality of GaN/metal/Si heterostructures fabricated by excimer laser lift-off. United States: N. p., 1999. Web. doi:10.1063/1.124861.
Wong, W.S., Cho, Y., Weber, E.R., Sands, T., Yu, K.M., Krueger, J., Wengrow, A.B., & Cheung, N.W. Structural and optical quality of GaN/metal/Si heterostructures fabricated by excimer laser lift-off. United States. doi:10.1063/1.124861.
Wong, W.S., Cho, Y., Weber, E.R., Sands, T., Yu, K.M., Krueger, J., Wengrow, A.B., and Cheung, N.W. Wed . "Structural and optical quality of GaN/metal/Si heterostructures fabricated by excimer laser lift-off". United States. doi:10.1063/1.124861.
@article{osti_686431,
title = {Structural and optical quality of GaN/metal/Si heterostructures fabricated by excimer laser lift-off},
author = {Wong, W.S. and Cho, Y. and Weber, E.R. and Sands, T. and Yu, K.M. and Krueger, J. and Wengrow, A.B. and Cheung, N.W.},
abstractNote = {Gallium nitride (GaN) thin films grown on sapphire substrates were successfully bonded and transferred onto Si substrates using a Pd{endash}In metallic bond. After bonding, a single 600 mJ/cm{sup 2}, 38 ns KrF (248 nm) excimer laser pulse was directed through the transparent sapphire followed by a low-temperature heat treatment to remove the substrate. Channeling-Rutherford backscattering measurements revealed the thickness of the defective interfacial region to be approximately 350 nm. The full width at half maximum, low-temperature (4 K), donor-bound exciton photoluminescence (PL) peak was larger by 25{percent} on the exposed interfacial layer compared to the original GaN surface. Ion milling of the exposed interface to a depth of 400 nm was found to remove the interfacial layer and associated defects. The minimum channeling yield and PL linewidths from the exposed interface were found to be comparable to those obtained from the original GaN surface after ion milling. {copyright} {ital 1999 American Institute of Physics.}},
doi = {10.1063/1.124861},
journal = {Applied Physics Letters},
number = 13,
volume = 75,
place = {United States},
year = {1999},
month = {9}
}