Core-level binding-energy shifts due to reconstruction on the Si(111) 2 x 1 surface

Journal Article · Mon Oct 27 00:00:00 EST 1980 · Phys. Rev. Lett.; (United States)

DOI:https://doi.org/10.1103/PhysRevLett.45.1414· OSTI ID:6863535

Brennan, S; Stoehr, J; Jaeger, R; Rowe, J E

High-resolution photoemission spectra of the Si 2p level for freshly cleaved Si(111) reveal two additional core-level structures which are shifted relative to the bulk. The observed shifts are 0.59 +- 0.04 eV to lower and 0.3 +- 0.03 eV to higher binding energy, respectively. These shifted peaks, which vanish with increasing contamination of the surface, are shown to be directly correlated with reconstruction on the Si(111) 2 x 1 surface.

• Research Organization: Stanford Synchrotron Radiation Laboratory, Stanford University, Stanford, California 94305
• OSTI ID: 6863535
• Journal Information: Phys. Rev. Lett.; (United States), Vol. 45:17
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
BINDING ENERGY
PHOTOELECTRON SPECTROSCOPY
CHARGE EXCHANGE
EXPERIMENTAL DATA
SPECTRAL SHIFT
SURFACES
SYNCHROTRON RADIATION
ULTRAHIGH VACUUM
BREMSSTRAHLUNG
DATA
ELECTROMAGNETIC RADIATION
ELECTRON SPECTROSCOPY
ELEMENTS
ENERGY
INFORMATION
NUMERICAL DATA
RADIATIONS
SEMIMETALS
SPECTROSCOPY
360603* - Materials- Properties