Kinetic effects and mechanisms limiting substitutional solubility in the formation of supersaturated alloys by pulsed laser annealing
Conference
·
OSTI ID:6863441
Pulsed laser annealing of silicon implanted by Group (III,V) dopants leads to the formation of supersaturated alloys by nonequilibrium processes occurring in the interfacial region during liquid phase epitaxial regrowth. The distribution coefficient from the melt (k') and the maximum dopant substitutional solubility (C/sub s//sup max/) are far greater than equilibrium values and both are functions of growth velocity. Substitutional solubility is limited by lattice strain and by constitutional supercooling at the interface during regrowth. Values for C/sub s//sup max/ obtained at different velocities are compared with predictions of thermodynamic limits for solute trapping.
- Research Organization:
- Oak Ridge National Lab., TN (USA)
- DOE Contract Number:
- W-7405-ENG-26
- OSTI ID:
- 6863441
- Report Number(s):
- CONF-801124-31(Draft); TRN: 81-001023
- Resource Relation:
- Conference: 3. annual meeting of the Materials Research Society, Boston, MA, USA, 17 Nov 1980
- Country of Publication:
- United States
- Language:
- English
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