Solid state radiative heat pump
Abstract
This patent describes a solid state radiative heat pump comprising: a thin film semiconductor having an active surface and a back surface and being capable of emitting an infrared radiation deficit from the active surface when a charge carrier deficit is present in the semiconductor, enhancing means for enhancing transmission of infrared radiation through the active surface from inside the semiconductor to outside thereof and vice versa, inhibiting means for inhibiting transmission of infrared radiation through the back surface of the semiconductor, means for producing a deficit of charge carriers in the semiconductor.
- Inventors:
- Publication Date:
- OSTI Identifier:
- 6861005
- Patent Number(s):
- US 4628695
- Assignee:
- Dept. of Energy, Washington, DC
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: Filed date 28 Sep 1984
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION; HEAT PUMPS; DESIGN; OPERATION; CHARGE CARRIERS; INFRARED RADIATION; RADIANT HEAT TRANSFER; SEMICONDUCTOR MATERIALS; SURFACES; THIN FILMS; ELECTROMAGNETIC RADIATION; ENERGY TRANSFER; FILMS; HEAT TRANSFER; MATERIALS; RADIATIONS; 320100* - Energy Conservation, Consumption, & Utilization- Buildings
Citation Formats
Berdhal, P H. Solid state radiative heat pump. United States: N. p., 1986.
Web.
Berdhal, P H. Solid state radiative heat pump. United States.
Berdhal, P H. 1986.
"Solid state radiative heat pump". United States.
@article{osti_6861005,
title = {Solid state radiative heat pump},
author = {Berdhal, P H},
abstractNote = {This patent describes a solid state radiative heat pump comprising: a thin film semiconductor having an active surface and a back surface and being capable of emitting an infrared radiation deficit from the active surface when a charge carrier deficit is present in the semiconductor, enhancing means for enhancing transmission of infrared radiation through the active surface from inside the semiconductor to outside thereof and vice versa, inhibiting means for inhibiting transmission of infrared radiation through the back surface of the semiconductor, means for producing a deficit of charge carriers in the semiconductor.},
doi = {},
url = {https://www.osti.gov/biblio/6861005},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 16 00:00:00 EST 1986},
month = {Tue Dec 16 00:00:00 EST 1986}
}
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