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Title: Plasma anodization of GaAs in a dc discharge

Abstract

Thin oxide films have been grown by anodization of GaAs in the negative glow region of a dc oxygen discharge. As-grown and annealed films grown on both p- and n-type bulk GaAs were characterized by conventional electrical measurements and by Auger analysis. The anodic oxide displayed ohmic characteristics up to fields of 0.5 x 10/sup 6/ V/cm with a resistivity of 10/sup 14/ ..cap omega.. cm in the as-grown condition and over 10/sup 15/ ..cap omega.. cm after anneal. Capacitance--voltage measurements indicated a fixed positive charge in the insulator of 1.5 x 10/sup 12/ cm/sup -2/ for p-type substrates and 4.0 x 10/sup 11/ cm/sup -2/ for n-type substrates. Majority carrier trapping near the oxide/GaAs interface was reduced by annealing and a corresponding reduction of As at the interface was observed. The distribution of fast interface states on p-type substrates had a broad minimum of 7--10 x 10/sup 11/ cm/sup -2/ eV/sup -1/ near midgap while the distribution of fast interface states displayed a peak of over 10/sup 13/ cm/sup -2/ eV/sup -1/ near midgap on n-type samples. No corresponding difference in the Auger composition profiles were observed between n- and p-type samples.

Authors:
;
Publication Date:
Research Org.:
Department of Electrical Engineering, University of Minnesota, Minneapolis, Minnesota 55455
OSTI Identifier:
6857325
Resource Type:
Journal Article
Journal Name:
J. Vac. Sci. Technol.; (United States)
Additional Journal Information:
Journal Volume: 15:4
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; ANODIZATION; ANNEALING; AUGER ELECTRON SPECTROSCOPY; ELECTRIC CONDUCTIVITY; FILMS; INTERFACES; ARSENIC COMPOUNDS; ARSENIDES; CHEMICAL COATING; CORROSION PROTECTION; DEPOSITION; ELECTRICAL PROPERTIES; ELECTROCHEMICAL COATING; ELECTROLYSIS; ELECTRON SPECTROSCOPY; GALLIUM COMPOUNDS; HEAT TREATMENTS; LYSIS; PHYSICAL PROPERTIES; PNICTIDES; SPECTROSCOPY; SURFACE COATING; 360601* - Other Materials- Preparation & Manufacture

Citation Formats

Chesler, L A, and Robinson, G Y. Plasma anodization of GaAs in a dc discharge. United States: N. p., 1978. Web. doi:10.1116/1.569781.
Chesler, L A, & Robinson, G Y. Plasma anodization of GaAs in a dc discharge. United States. https://doi.org/10.1116/1.569781
Chesler, L A, and Robinson, G Y. Sat . "Plasma anodization of GaAs in a dc discharge". United States. https://doi.org/10.1116/1.569781.
@article{osti_6857325,
title = {Plasma anodization of GaAs in a dc discharge},
author = {Chesler, L A and Robinson, G Y},
abstractNote = {Thin oxide films have been grown by anodization of GaAs in the negative glow region of a dc oxygen discharge. As-grown and annealed films grown on both p- and n-type bulk GaAs were characterized by conventional electrical measurements and by Auger analysis. The anodic oxide displayed ohmic characteristics up to fields of 0.5 x 10/sup 6/ V/cm with a resistivity of 10/sup 14/ ..cap omega.. cm in the as-grown condition and over 10/sup 15/ ..cap omega.. cm after anneal. Capacitance--voltage measurements indicated a fixed positive charge in the insulator of 1.5 x 10/sup 12/ cm/sup -2/ for p-type substrates and 4.0 x 10/sup 11/ cm/sup -2/ for n-type substrates. Majority carrier trapping near the oxide/GaAs interface was reduced by annealing and a corresponding reduction of As at the interface was observed. The distribution of fast interface states on p-type substrates had a broad minimum of 7--10 x 10/sup 11/ cm/sup -2/ eV/sup -1/ near midgap while the distribution of fast interface states displayed a peak of over 10/sup 13/ cm/sup -2/ eV/sup -1/ near midgap on n-type samples. No corresponding difference in the Auger composition profiles were observed between n- and p-type samples.},
doi = {10.1116/1.569781},
url = {https://www.osti.gov/biblio/6857325}, journal = {J. Vac. Sci. Technol.; (United States)},
number = ,
volume = 15:4,
place = {United States},
year = {1978},
month = {7}
}