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Title: Single-event upset rate estimates for a 16-K CMOS (complementary metal oxide semiconductor) SRAM (static random access memory). Technical report

Abstract

A radiation-hardened 16K CMOS SRAM was developed for satellite and deep space applications. The RAM memory cell was modeled to predict the critical charge, necessary for single-particle upset, and a function of temperature, total dose, and hardening feedback resistance. Laboratory measurements of the single-event cross section and effective funnel length were made using the Lawrence Berkeley Laboratory's 88-inch cyclotron to generate high energy krypton ions. The combination of modeled and measured parameters permitted estimation of the upset rate for the RAM cell, and the mean-time-to-failure for a 512-K word, 22-bit memory system employing error detection and correction circuits while functioning in the Adam's 90% worst-case cosmic ray environment. This report is presented in the form of a worst tutorial review, summarizing the results of substantial research efforts within the single event community.

Authors:
; ;
Publication Date:
Research Org.:
Aerospace Corp., El Segundo, CA (USA). Space Sciences Lab.
OSTI Identifier:
6856630
Report Number(s):
AD-A-176857/1/XAB; TR-0086(6940-05)-10
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; COSMIC RADIATION; SEMICONDUCTOR DETECTORS; MEMORY DEVICES; RADIATION HARDENING; CROSS SECTIONS; DETECTION; ERRORS; FEEDBACK; KRYPTON IONS; SATELLITES; CHARGED PARTICLES; HARDENING; IONIZING RADIATIONS; IONS; MEASURING INSTRUMENTS; PHYSICAL RADIATION EFFECTS; RADIATION DETECTORS; RADIATION EFFECTS; RADIATIONS; 640101* - Astrophysics & Cosmology- Cosmic Radiation; 440104 - Radiation Instrumentation- High Energy Physics Instrumentation; 440200 - Radiation Effects on Instrument Components, Instruments, or Electronic Systems

Citation Formats

Browning, J S, Koga, R, and Kolasinski, W A. Single-event upset rate estimates for a 16-K CMOS (complementary metal oxide semiconductor) SRAM (static random access memory). Technical report. United States: N. p., 1986. Web.
Browning, J S, Koga, R, & Kolasinski, W A. Single-event upset rate estimates for a 16-K CMOS (complementary metal oxide semiconductor) SRAM (static random access memory). Technical report. United States.
Browning, J S, Koga, R, and Kolasinski, W A. 1986. "Single-event upset rate estimates for a 16-K CMOS (complementary metal oxide semiconductor) SRAM (static random access memory). Technical report". United States.
@article{osti_6856630,
title = {Single-event upset rate estimates for a 16-K CMOS (complementary metal oxide semiconductor) SRAM (static random access memory). Technical report},
author = {Browning, J S and Koga, R and Kolasinski, W A},
abstractNote = {A radiation-hardened 16K CMOS SRAM was developed for satellite and deep space applications. The RAM memory cell was modeled to predict the critical charge, necessary for single-particle upset, and a function of temperature, total dose, and hardening feedback resistance. Laboratory measurements of the single-event cross section and effective funnel length were made using the Lawrence Berkeley Laboratory's 88-inch cyclotron to generate high energy krypton ions. The combination of modeled and measured parameters permitted estimation of the upset rate for the RAM cell, and the mean-time-to-failure for a 512-K word, 22-bit memory system employing error detection and correction circuits while functioning in the Adam's 90% worst-case cosmic ray environment. This report is presented in the form of a worst tutorial review, summarizing the results of substantial research efforts within the single event community.},
doi = {},
url = {https://www.osti.gov/biblio/6856630}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1986},
month = {9}
}

Technical Report:
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