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Title: InP:Fe photoconductors as photodetectors

Abstract

Impulse response measurements of photoconductors fabricated from Fe-doped, semi-insulating InP crystals are described. Results show purely exponential decay transients with decay times which are inversely related to Fe concentrations. Photoconductive gains as high as 5 have been demonstrated in photoconductors with AuGe and AuSn contacts. Response times from 150 to 1000 ps are observed.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Los Alamos National Lab., NM
OSTI Identifier:
6853184
Resource Type:
Journal Article
Journal Name:
IEEE Trans. Electron Devices; (United States)
Additional Journal Information:
Journal Volume: ED-30:4
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION; PHOTOCONDUCTORS; PERFORMANCE; PHOTODETECTORS; DOPED MATERIALS; GAIN; INDIUM PHOSPHIDES; PULSES; AMPLIFICATION; INDIUM COMPOUNDS; MATERIALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; 440300* - Miscellaneous Instruments- (-1989)

Citation Formats

Hammond, R B, Paulter, N G, Wagner, R S, Springer, T E, and Mac Roberts, M D.J. InP:Fe photoconductors as photodetectors. United States: N. p., 1983. Web. doi:10.1109/T-ED.1983.21138.
Hammond, R B, Paulter, N G, Wagner, R S, Springer, T E, & Mac Roberts, M D.J. InP:Fe photoconductors as photodetectors. United States. https://doi.org/10.1109/T-ED.1983.21138
Hammond, R B, Paulter, N G, Wagner, R S, Springer, T E, and Mac Roberts, M D.J. 1983. "InP:Fe photoconductors as photodetectors". United States. https://doi.org/10.1109/T-ED.1983.21138.
@article{osti_6853184,
title = {InP:Fe photoconductors as photodetectors},
author = {Hammond, R B and Paulter, N G and Wagner, R S and Springer, T E and Mac Roberts, M D.J.},
abstractNote = {Impulse response measurements of photoconductors fabricated from Fe-doped, semi-insulating InP crystals are described. Results show purely exponential decay transients with decay times which are inversely related to Fe concentrations. Photoconductive gains as high as 5 have been demonstrated in photoconductors with AuGe and AuSn contacts. Response times from 150 to 1000 ps are observed.},
doi = {10.1109/T-ED.1983.21138},
url = {https://www.osti.gov/biblio/6853184}, journal = {IEEE Trans. Electron Devices; (United States)},
number = ,
volume = ED-30:4,
place = {United States},
year = {Fri Apr 01 00:00:00 EST 1983},
month = {Fri Apr 01 00:00:00 EST 1983}
}