InP:Fe photoconductors as photodetectors
Abstract
Impulse response measurements of photoconductors fabricated from Fe-doped, semi-insulating InP crystals are described. Results show purely exponential decay transients with decay times which are inversely related to Fe concentrations. Photoconductive gains as high as 5 have been demonstrated in photoconductors with AuGe and AuSn contacts. Response times from 150 to 1000 ps are observed.
- Authors:
- Publication Date:
- Research Org.:
- Los Alamos National Lab., NM
- OSTI Identifier:
- 6853184
- Resource Type:
- Journal Article
- Journal Name:
- IEEE Trans. Electron Devices; (United States)
- Additional Journal Information:
- Journal Volume: ED-30:4
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION; PHOTOCONDUCTORS; PERFORMANCE; PHOTODETECTORS; DOPED MATERIALS; GAIN; INDIUM PHOSPHIDES; PULSES; AMPLIFICATION; INDIUM COMPOUNDS; MATERIALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; 440300* - Miscellaneous Instruments- (-1989)
Citation Formats
Hammond, R B, Paulter, N G, Wagner, R S, Springer, T E, and Mac Roberts, M D.J. InP:Fe photoconductors as photodetectors. United States: N. p., 1983.
Web. doi:10.1109/T-ED.1983.21138.
Hammond, R B, Paulter, N G, Wagner, R S, Springer, T E, & Mac Roberts, M D.J. InP:Fe photoconductors as photodetectors. United States. https://doi.org/10.1109/T-ED.1983.21138
Hammond, R B, Paulter, N G, Wagner, R S, Springer, T E, and Mac Roberts, M D.J. 1983.
"InP:Fe photoconductors as photodetectors". United States. https://doi.org/10.1109/T-ED.1983.21138.
@article{osti_6853184,
title = {InP:Fe photoconductors as photodetectors},
author = {Hammond, R B and Paulter, N G and Wagner, R S and Springer, T E and Mac Roberts, M D.J.},
abstractNote = {Impulse response measurements of photoconductors fabricated from Fe-doped, semi-insulating InP crystals are described. Results show purely exponential decay transients with decay times which are inversely related to Fe concentrations. Photoconductive gains as high as 5 have been demonstrated in photoconductors with AuGe and AuSn contacts. Response times from 150 to 1000 ps are observed.},
doi = {10.1109/T-ED.1983.21138},
url = {https://www.osti.gov/biblio/6853184},
journal = {IEEE Trans. Electron Devices; (United States)},
number = ,
volume = ED-30:4,
place = {United States},
year = {Fri Apr 01 00:00:00 EST 1983},
month = {Fri Apr 01 00:00:00 EST 1983}
}
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