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Title: Method for accurate growth of vertical-cavity surface-emitting lasers

Abstract

We report a method for accurate growth of vertical-cavity surface-emitting lasers (VCSELs). The method uses a single reflectivity spectrum measurement to determine the structure of the partially completed VCSEL at a critical point of growth. This information, along with the extracted growth rates, allows imprecisions in growth parameters to be compensated for during growth of the remaining structure, which can then be completed with very accurate critical dimensions. Using this method, we can now routinely grow lasing VCSELs with Fabry--Perot cavity resonance wavelengths controlled to within 0.5%.

Authors:
;  [1]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
Publication Date:
OSTI Identifier:
6852928
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters; (United States)
Additional Journal Information:
Journal Volume: 62:11; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; SEMICONDUCTOR LASERS; MOLECULAR BEAM EPITAXY; CONTROL; FABRY-PEROT INTERFEROMETER; IN-SITU PROCESSING; OPTICAL REFLECTION; EPITAXY; INTERFEROMETERS; LASERS; MEASURING INSTRUMENTS; PROCESSING; REFLECTION; SEMICONDUCTOR DEVICES; SOLID STATE LASERS; 426002* - Engineering- Lasers & Masers- (1990-)

Citation Formats

Chalmers, S A, and Killeen, K P. Method for accurate growth of vertical-cavity surface-emitting lasers. United States: N. p., 1993. Web. doi:10.1063/1.108727.
Chalmers, S A, & Killeen, K P. Method for accurate growth of vertical-cavity surface-emitting lasers. United States. doi:10.1063/1.108727.
Chalmers, S A, and Killeen, K P. Mon . "Method for accurate growth of vertical-cavity surface-emitting lasers". United States. doi:10.1063/1.108727.
@article{osti_6852928,
title = {Method for accurate growth of vertical-cavity surface-emitting lasers},
author = {Chalmers, S A and Killeen, K P},
abstractNote = {We report a method for accurate growth of vertical-cavity surface-emitting lasers (VCSELs). The method uses a single reflectivity spectrum measurement to determine the structure of the partially completed VCSEL at a critical point of growth. This information, along with the extracted growth rates, allows imprecisions in growth parameters to be compensated for during growth of the remaining structure, which can then be completed with very accurate critical dimensions. Using this method, we can now routinely grow lasing VCSELs with Fabry--Perot cavity resonance wavelengths controlled to within 0.5%.},
doi = {10.1063/1.108727},
journal = {Applied Physics Letters; (United States)},
issn = {0003-6951},
number = ,
volume = 62:11,
place = {United States},
year = {1993},
month = {3}
}