Low-temperature epitaxial growth of thin metal films

Journal Article · Thu Mar 15 00:00:00 EST 1990 · Physical Review, B: Condensed Matter; (USA)

DOI:https://doi.org/10.1103/PhysRevB.41.5410· OSTI ID:6847379

Evans, J W; Sanders, D E; Thiel, P A; DePristo, A E ^[1]

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1. Department of Physics, Iowa State University, Ames, IA (USA) Department of Chemistry, Iowa State University, Ames, IA (USA) Ames Laboratory, Iowa State University, Ames, Iowa 50011 (USA)

We present a different mechanism to explain the occurrence of long-lived oscillations in diffraction spot intensities during epitaxial growth of metal films on fcc (100) substrates at low temperature. Rather than rely on the common picture of cyclical nucleation and growth to produce the oscillations, the model invokes downward funneling'' deposition dynamics to fourfold-hollow adsorption sites.

• DOE Contract Number: W-7405-ENG-82
• OSTI ID: 6847379
• Journal Information: Physical Review, B: Condensed Matter; (USA), Vol. 41:8; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
METALS
EPITAXY
DEPOSITION
ELECTRON DIFFRACTION
FCC LATTICES
MATHEMATICAL MODELS
NUCLEATION
OSCILLATIONS
THIN FILMS
COHERENT SCATTERING
CRYSTAL LATTICES
CRYSTAL STRUCTURE
CUBIC LATTICES
DIFFRACTION
ELEMENTS
FILMS
SCATTERING
656002* - Condensed Matter Physics- General Techniques in Condensed Matter- (1987-)