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Title: Synthesis and characterization of Ti-Si-C-N films

Abstract

This study represents one of the first attempts to deposit multicomponent (more than three components) thin films by magnetron sputtering of multiphase composite targets (three phases or even more). Films of Ti-Si-C-N were synthesized through dc magnetron sputtering of xTiC + yTi{sub 3}SiC{sub 2} + zA composite targets (A was TiSi{sub 2}, SiC, or a mixture of these phases) in an argon atmosphere or in a gaseous mixture of argon and nitrogen. The as-deposited films were characterized using Auger electron spectroscopy, X-ray diffraction, transmission electron microscopy using selected area electron diffraction and high-resolution techniques, and microhardness. It was shown that the substrate temperature and the nitrogen concentration in the reactive gas had a strong influence on the structure and the composition of the as-deposited films. Polycrystalline grains contained a high density of dislocations and exhibited a curved appearance of the lattice fringes that is probably due to the presence of the long-range stress fields. The measurements of the lattice parameters using the selected area electron diffraction pattern (SA EDP) method indicated, with a high probability, that the polycrystalline grains consist of clusters of atoms with varying compositions. The grain boundaries in the nanocrystalline Ti-Si-C-N films had both ordered and disorderedmore » regions, although some regions close to the interface exhibited neither a fully crystalline nor a homogeneously amorphous structure. The contribution of compressive stress as determined by an increase in the fcc lattice parameter is also discussed.« less

Authors:
; ;  [1];  [2]
  1. Moscow Steel and Alloys Inst., Moscow (Russian Federation). SHS Center
  2. Colorado School of Mines, Golden, CO (United States). Advanced Castings and Surface Engineering Lab.
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
684461
Resource Type:
Journal Article
Journal Name:
Metallurgical and Materials Transactions. A, Physical Metallurgy and Materials Science
Additional Journal Information:
Journal Volume: 30; Journal Issue: 9; Other Information: PBD: Sep 1999
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; MICROSTRUCTURE; MICROHARDNESS; SPUTTERING; TITANIUM COMPOUNDS; CARBIDES; SILICIDES; NITRIDES; COMPOSITE MATERIALS; THIN FILMS; X-RAY DIFFRACTION; MICROSCOPY

Citation Formats

Shtansky, D.V., Levashov, E.A., Sheveiko, A.N., and Moore, J.J. Synthesis and characterization of Ti-Si-C-N films. United States: N. p., 1999. Web. doi:10.1007/s11661-999-0252-0.
Shtansky, D.V., Levashov, E.A., Sheveiko, A.N., & Moore, J.J. Synthesis and characterization of Ti-Si-C-N films. United States. doi:10.1007/s11661-999-0252-0.
Shtansky, D.V., Levashov, E.A., Sheveiko, A.N., and Moore, J.J. Wed . "Synthesis and characterization of Ti-Si-C-N films". United States. doi:10.1007/s11661-999-0252-0.
@article{osti_684461,
title = {Synthesis and characterization of Ti-Si-C-N films},
author = {Shtansky, D.V. and Levashov, E.A. and Sheveiko, A.N. and Moore, J.J.},
abstractNote = {This study represents one of the first attempts to deposit multicomponent (more than three components) thin films by magnetron sputtering of multiphase composite targets (three phases or even more). Films of Ti-Si-C-N were synthesized through dc magnetron sputtering of xTiC + yTi{sub 3}SiC{sub 2} + zA composite targets (A was TiSi{sub 2}, SiC, or a mixture of these phases) in an argon atmosphere or in a gaseous mixture of argon and nitrogen. The as-deposited films were characterized using Auger electron spectroscopy, X-ray diffraction, transmission electron microscopy using selected area electron diffraction and high-resolution techniques, and microhardness. It was shown that the substrate temperature and the nitrogen concentration in the reactive gas had a strong influence on the structure and the composition of the as-deposited films. Polycrystalline grains contained a high density of dislocations and exhibited a curved appearance of the lattice fringes that is probably due to the presence of the long-range stress fields. The measurements of the lattice parameters using the selected area electron diffraction pattern (SA EDP) method indicated, with a high probability, that the polycrystalline grains consist of clusters of atoms with varying compositions. The grain boundaries in the nanocrystalline Ti-Si-C-N films had both ordered and disordered regions, although some regions close to the interface exhibited neither a fully crystalline nor a homogeneously amorphous structure. The contribution of compressive stress as determined by an increase in the fcc lattice parameter is also discussed.},
doi = {10.1007/s11661-999-0252-0},
journal = {Metallurgical and Materials Transactions. A, Physical Metallurgy and Materials Science},
number = 9,
volume = 30,
place = {United States},
year = {1999},
month = {9}
}