Electrically conducting oxide thin films of (Sr,Ca)RuO{sub 3} and structural compatibility with (Ba,Sr)TiO{sub 3}
- Univ. of Washington, Seatte, WA (United States). Dept. of Materials Science and Engineering
- Hanyang Univ., Seoul (Korea, Republic of). Dept. of Inorganic Materials Engineering
- Univ. of Washington, Seattle, WA (United States). Dept. of Materials Science and Engineering
Electrically conducting oxide thin films, Ca{sub x}Sr{sub 1{minus}x}RuO{sub 3}, where x varies from 1 to 0, were prepared by radio frequency (RF) magnetron sputtering, and their structural compatibility with (Ba,Sr)TiO{sub 3} thin films was investigated. It was found that both materials crystallize into the perovskite structure, and the lattice parameter for Ca{sub x}Sr{sub 1{minus}x}RuO{sub 3} can be tuned to that of (Ba,Sr)TiO{sub 3} by adjusting the Ca/Sr ratio, so that the compatibility between the two materials at the interface is increased. Structural, chemical, and electrical properties of the thin films and the heterostructures were characterized. Cross-sectional high-resolution electron microscopy (HREM) revealed that the (Ba,Sr)TiO{sub 3} thin film was grown epitaxially on the (Ca,Sr)RuO{sub 3}. The potential utility of Ca{sub x}Sr{sub 1{minus}x}RuO{sub 3} as a bottom electrode for (Ba,Sr)TiO{sub 3} is suggested.
- OSTI ID:
- 684413
- Journal Information:
- Materials Research Bulletin, Vol. 34, Issue 6; Other Information: PBD: Apr 1999
- Country of Publication:
- United States
- Language:
- English
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