Reaction layers around SiC particles in Ti: An electron microscopy study

Journal Article · Tue Aug 10 00:00:00 EDT 1999 · Acta Materialia

DOI:https://doi.org/10.1016/S1359-6454(99)00151-2· OSTI ID:684406

Kooi, B J; Kabel, M; Kloosterman, A B; De Hosson, J T.M. ^[1]

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1. Univ. of Groningen (Netherlands)

A detailed description is given of the microstructure of the top layer of Ti-6Al-4V with SiC particles embedded with a high-power Nd:Yag laser system. Scanning electron microscopy (SEM), as well as conventional, analytical and high-resolution transmission electron microscopy (TEM) were used. An existing controversy about the presence or absence of Ti{sub 3}SiC{sub 2} in the reactive SiC/Ti systems is clarified and the first observations of Ti{sub 5}Si{sub 3} precipitation on stacking faults in Si supersaturated TiC are reported. The Si released during the reaction SiC + Ti {yields} TiC + Si results in the formation of Ti{sub 5}Si{sub 3}. If in the reaction layer regions in between the TiC grains become enclosed, the rejected Si content increases locally and Ti{sub 3}SiC{sub 2} plates with dominant (0001) facets nucleate. In the TiC grains particularly of the cellular reaction layer, a high density of widely extending stacking faults of the order of 100 nm is observed and on these faults in many instances small Ti{sub 5}Si{sub 3} precipitates are present.

• OSTI ID: 684406
• Journal Information: Acta Materialia, Vol. 47, Issue 10; Other Information: PBD: 10 Aug 1999
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
MICROSTRUCTURE
TITANIUM BASE ALLOYS
SILICON CARBIDES
COMPOSITE MATERIALS
INTERFACES
CHEMICAL REACTIONS
TITANIUM CARBIDES
MICROSCOPY