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Title: Reaction layers around SiC particles in Ti: An electron microscopy study

Abstract

A detailed description is given of the microstructure of the top layer of Ti-6Al-4V with SiC particles embedded with a high-power Nd:Yag laser system. Scanning electron microscopy (SEM), as well as conventional, analytical and high-resolution transmission electron microscopy (TEM) were used. An existing controversy about the presence or absence of Ti{sub 3}SiC{sub 2} in the reactive SiC/Ti systems is clarified and the first observations of Ti{sub 5}Si{sub 3} precipitation on stacking faults in Si supersaturated TiC are reported. The Si released during the reaction SiC + Ti {yields} TiC + Si results in the formation of Ti{sub 5}Si{sub 3}. If in the reaction layer regions in between the TiC grains become enclosed, the rejected Si content increases locally and Ti{sub 3}SiC{sub 2} plates with dominant (0001) facets nucleate. In the TiC grains particularly of the cellular reaction layer, a high density of widely extending stacking faults of the order of 100 nm is observed and on these faults in many instances small Ti{sub 5}Si{sub 3} precipitates are present.

Authors:
; ; ;  [1]
  1. Univ. of Groningen (Netherlands)
Publication Date:
OSTI Identifier:
684406
Resource Type:
Journal Article
Journal Name:
Acta Materialia
Additional Journal Information:
Journal Volume: 47; Journal Issue: 10; Other Information: PBD: 10 Aug 1999
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; MICROSTRUCTURE; TITANIUM BASE ALLOYS; SILICON CARBIDES; COMPOSITE MATERIALS; INTERFACES; CHEMICAL REACTIONS; TITANIUM CARBIDES; MICROSCOPY

Citation Formats

Kooi, B.J., Kabel, M., Kloosterman, A.B., and De Hosson, J.T.M. Reaction layers around SiC particles in Ti: An electron microscopy study. United States: N. p., 1999. Web. doi:10.1016/S1359-6454(99)00151-2.
Kooi, B.J., Kabel, M., Kloosterman, A.B., & De Hosson, J.T.M. Reaction layers around SiC particles in Ti: An electron microscopy study. United States. doi:10.1016/S1359-6454(99)00151-2.
Kooi, B.J., Kabel, M., Kloosterman, A.B., and De Hosson, J.T.M. Tue . "Reaction layers around SiC particles in Ti: An electron microscopy study". United States. doi:10.1016/S1359-6454(99)00151-2.
@article{osti_684406,
title = {Reaction layers around SiC particles in Ti: An electron microscopy study},
author = {Kooi, B.J. and Kabel, M. and Kloosterman, A.B. and De Hosson, J.T.M.},
abstractNote = {A detailed description is given of the microstructure of the top layer of Ti-6Al-4V with SiC particles embedded with a high-power Nd:Yag laser system. Scanning electron microscopy (SEM), as well as conventional, analytical and high-resolution transmission electron microscopy (TEM) were used. An existing controversy about the presence or absence of Ti{sub 3}SiC{sub 2} in the reactive SiC/Ti systems is clarified and the first observations of Ti{sub 5}Si{sub 3} precipitation on stacking faults in Si supersaturated TiC are reported. The Si released during the reaction SiC + Ti {yields} TiC + Si results in the formation of Ti{sub 5}Si{sub 3}. If in the reaction layer regions in between the TiC grains become enclosed, the rejected Si content increases locally and Ti{sub 3}SiC{sub 2} plates with dominant (0001) facets nucleate. In the TiC grains particularly of the cellular reaction layer, a high density of widely extending stacking faults of the order of 100 nm is observed and on these faults in many instances small Ti{sub 5}Si{sub 3} precipitates are present.},
doi = {10.1016/S1359-6454(99)00151-2},
journal = {Acta Materialia},
number = 10,
volume = 47,
place = {United States},
year = {1999},
month = {8}
}