skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Mesoscale modeling of the yield point properties of silicon crystals

Abstract

The yield point properties that characterize silicon crystals in the temperature domain where Peierls forces govern the dislocation mobility have been investigated in easy glide conditions with the help of a three-dimensional mesoscopic simulation of dislocation dynamics. The influence of temperature, applied strain rate and initial dislocation microstructure, the latter consisting of a random initial distribution of dislocation sources, were examined in detail and globally found in fair agreement with the available experimental results. A critical examination of a well-known model by Alexander and Haasen has been performed, leading to a discussion and reformulation of the law accounting for the multiplication rate of dislocations. The present lack of knowledge on the mechanisms by which new dislocation sources are formed during the plastic deformation of silicon crystals is emphasized.

Authors:
;  [1];  [2]
  1. CNRS-ONERA, Chatillon (France). Lab. d`Etude des Microstructures
  2. Univ. Paris-Sud, Orsay (France). Lab. de Metallurgie Structurale
Publication Date:
OSTI Identifier:
684390
Resource Type:
Journal Article
Journal Name:
Acta Materialia
Additional Journal Information:
Journal Volume: 47; Journal Issue: 10; Other Information: PBD: 10 Aug 1999
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; YIELD STRENGTH; SILICON; DISLOCATIONS; COMPUTERIZED SIMULATION; THREE-DIMENSIONAL CALCULATIONS; STRAIN RATE; TEMPERATURE DEPENDENCE

Citation Formats

Moulin, A., Kubin, L.P., and Condat, M. Mesoscale modeling of the yield point properties of silicon crystals. United States: N. p., 1999. Web. doi:10.1016/S1359-6454(99)00180-9.
Moulin, A., Kubin, L.P., & Condat, M. Mesoscale modeling of the yield point properties of silicon crystals. United States. doi:10.1016/S1359-6454(99)00180-9.
Moulin, A., Kubin, L.P., and Condat, M. Tue . "Mesoscale modeling of the yield point properties of silicon crystals". United States. doi:10.1016/S1359-6454(99)00180-9.
@article{osti_684390,
title = {Mesoscale modeling of the yield point properties of silicon crystals},
author = {Moulin, A. and Kubin, L.P. and Condat, M.},
abstractNote = {The yield point properties that characterize silicon crystals in the temperature domain where Peierls forces govern the dislocation mobility have been investigated in easy glide conditions with the help of a three-dimensional mesoscopic simulation of dislocation dynamics. The influence of temperature, applied strain rate and initial dislocation microstructure, the latter consisting of a random initial distribution of dislocation sources, were examined in detail and globally found in fair agreement with the available experimental results. A critical examination of a well-known model by Alexander and Haasen has been performed, leading to a discussion and reformulation of the law accounting for the multiplication rate of dislocations. The present lack of knowledge on the mechanisms by which new dislocation sources are formed during the plastic deformation of silicon crystals is emphasized.},
doi = {10.1016/S1359-6454(99)00180-9},
journal = {Acta Materialia},
number = 10,
volume = 47,
place = {United States},
year = {1999},
month = {8}
}