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Title: Structural and electrical properties of (Ti[sub 0. 9]Zr[sub 0. 1])Si[sub 2] thin films on Si(111)

Journal Article · · Applied Physics Letters; (United States)
DOI:https://doi.org/10.1063/1.112692· OSTI ID:6841837
; ; ; ; ;  [1]
  1. Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202 (United States)

Alloy films of Ti and up to 20% Zr were prepared by codeposition onto Si(111) surfaces in ultrahigh vacuum. After [ital in] [ital situ] thermal annealing at temperatures of [similar to]600 [degree]C, the films form the C49 phase and are stable in this phase up to at least 910 [degree]C. In contrast, Ti films on Si(111) initially react to form the C49 phase and transform to the C54 phase at [similar to]700 [degree]C. The surfaces of the (Ti[sub 0.9]Zr[sub 0.1])Si[sub 2] alloy films are studied by atomic force microscopy and are shown to be smoother than the surfaces of TiSi[sub 2] films on Si substrates. In addition the tendency to island formation is also not observed for annealing temperatures less than 910 [degree]C. The sheet resistivity of the (Ti[sub 0.9]Zr[sub 0.1])Si[sub 2] alloy films is found to be [similar to]46 [mu][Omega] cm for annealing temperatures from 600 to 910 [degree]C.

DOE Contract Number:
FG05-89ER45384
OSTI ID:
6841837
Journal Information:
Applied Physics Letters; (United States), Vol. 65:19; ISSN 0003-6951
Country of Publication:
United States
Language:
English