Heteroepitaxial wurtzite and zinc-blende structure GaN grown by reactive-ion molecular-beam epitaxy: Growth kinetics, microstructure, and properties

Journal Article · Fri Jan 01 00:00:00 EST 1993 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.353882· OSTI ID:6837588

Powell, R C; Lee, N; Kim, Y; Greene, J E ^[1]

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1. Materials Science Department, the Coordinated Science Laboratory, and the Materials Research Laboratory, University of Illinois, 1101 West Springfield Avenue, Urbana, Illinois 61801 (United States)

Reactive-ion molecular-beam epitaxy has been used to grow epitaxial hexagonal-structure [alpha]-GaN on Al[sub 2]O[sub 3](0001) and Al[sub 2]O[sub 3](01[bar 1]2) substrates and metastable zinc-blende-structure [beta]-GaN on MgO(001) under the following conditions: growth temperature [ital T][sub [ital s]]=450--800 [degree]C; incident N[sup +][sub 2]/Ga flux ratio [ital J][sub N[sup +][sub 2]]/[ital J][sub Ga]=1--5; and N[sup +][sub 2] kinetic energy [ital E][sub N[sup +][sub 2]]=35--90 eV. The surface structure of the [alpha]-GaN films was (1[times]1), with an [approx]3% contraction in the in-plane lattice constant for films grown on Al[sub 2]O[sub 3](0001), while the [beta]-GaN films exhibited a 90[degree]-rotated two-domain (4[times]1) reconstruction. Using a combination of [ital in] [ital situ] reflection high-energy electron diffraction, double-crystal x-ray diffraction, and cross-sectional transmission electron microscopy, the film/substrate epitaxial relationships were determined to be: (0001)[sub GaN][parallel] (0001)[sub Al[sub 2]O[sub 3]] with [2[bar 1][bar 1]0][sub GaN][parallel][1[bar 1]00][sub Al[sub 2]O[sub 3]] and [1[bar 1]00][sub GaN][parallel][1[bar 2]10][sub Al[sub 2]O[sub 3]], (2[bar 1][bar 1]0)[sub GaN][parallel](01[bar 1]2)[sub Al[sub 2]O[sub 3]] with [0001][sub GaN][parallel][0[bar 1]11][sub Al[sub 2]O[sub 3]] and [0[bar 1]10][sub GaN][parallel][2[bar 1][bar 1]0][sub Al[sub 2]O[sub 3]], and (001)[sub GaN][parallel](001)[sub MgO] with [001][sub GaN][parallel][001][sub MgO].

• DOE Contract Number: AC02-76ER01198
• OSTI ID: 6837588
• Journal Information: Journal of Applied Physics; (United States), Vol. 73:1; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM NITRIDES
MOLECULAR BEAM EPITAXY
CRYSTAL DEFECTS
ELECTRIC CONDUCTIVITY
GROWTH
IONS
MICROSTRUCTURE
PHYSICAL RADIATION EFFECTS
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
CHARGED PARTICLES
COHERENT SCATTERING
CRYSTAL STRUCTURE
DIFFRACTION
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
EPITAXY
FILMS
GALLIUM COMPOUNDS
MICROSCOPY
NITRIDES
NITROGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
RADIATION EFFECTS
SCATTERING
360602* - Other Materials- Structure & Phase Studies