Role of lattice mismatch and surface chemistry in the formation of epitaxial semiconductor-insulator interfaces
Abstract
The formation of SrF{sub 2}/Si(111) and Ge/CaF{sub 2}/Si(111) interfaces is studied with photoemission and compared to previous results for the CaF{sub 2}/Si(111) interface. The interface between SrF{sub 2} and Si(111) is found to be nonstoichiometric, similar to the interface between CaF{sub 2} and Si(111): the bonding is between Si and the cation, with a layer of fluorine missing at the interface. In the case of Ge growth on CaF{sub 2}/Si(111), a variety of effects are noted: The CaF{sub 2}/Si(111) valence-band offset is reduced by about 1 eV upon deposition of Ge at room temperature. The sticking coefficient of the Ge is significantly increased by preparing the CaF{sub 2} surface with electron bombardment to remove the top layer of fluorine. For both the irradiated and nonirradiated cases, annealing of thin room-temperature-deposited films resulted in Ge island formation.
- Authors:
-
- Department of Physics, University of California, Berkeley, Berkeley, California 94720 (USA)
- Xerox Corporation, Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304 (USA)
- Publication Date:
- OSTI Identifier:
- 6836809
- Resource Type:
- Journal Article
- Journal Name:
- Physical Review, B: Condensed Matter; (USA)
- Additional Journal Information:
- Journal Volume: 41:12; Journal ID: ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; CALCIUM FLUORIDES; CHEMICAL BONDS; GERMANIUM; SILICON; STRONTIUM FLUORIDES; ANNEALING; ELECTRICAL INSULATORS; EPITAXY; INTERFACES; LATTICE PARAMETERS; MEDIUM TEMPERATURE; PHOTOEMISSION; SEMICONDUCTOR MATERIALS; STOICHIOMETRY; SURFACE PROPERTIES; VALENCE; ALKALINE EARTH METAL COMPOUNDS; CALCIUM COMPOUNDS; CALCIUM HALIDES; ELECTRICAL EQUIPMENT; ELEMENTS; EMISSION; EQUIPMENT; FLUORIDES; FLUORINE COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; HEAT TREATMENTS; MATERIALS; METALS; SECONDARY EMISSION; SEMIMETALS; STRONTIUM COMPOUNDS; 360602* - Other Materials- Structure & Phase Studies
Citation Formats
Olmstead, M A, and Bringans, R D. Role of lattice mismatch and surface chemistry in the formation of epitaxial semiconductor-insulator interfaces. United States: N. p., 1990.
Web. doi:10.1103/PhysRevB.41.8420.
Olmstead, M A, & Bringans, R D. Role of lattice mismatch and surface chemistry in the formation of epitaxial semiconductor-insulator interfaces. United States. https://doi.org/10.1103/PhysRevB.41.8420
Olmstead, M A, and Bringans, R D. 1990.
"Role of lattice mismatch and surface chemistry in the formation of epitaxial semiconductor-insulator interfaces". United States. https://doi.org/10.1103/PhysRevB.41.8420.
@article{osti_6836809,
title = {Role of lattice mismatch and surface chemistry in the formation of epitaxial semiconductor-insulator interfaces},
author = {Olmstead, M A and Bringans, R D},
abstractNote = {The formation of SrF{sub 2}/Si(111) and Ge/CaF{sub 2}/Si(111) interfaces is studied with photoemission and compared to previous results for the CaF{sub 2}/Si(111) interface. The interface between SrF{sub 2} and Si(111) is found to be nonstoichiometric, similar to the interface between CaF{sub 2} and Si(111): the bonding is between Si and the cation, with a layer of fluorine missing at the interface. In the case of Ge growth on CaF{sub 2}/Si(111), a variety of effects are noted: The CaF{sub 2}/Si(111) valence-band offset is reduced by about 1 eV upon deposition of Ge at room temperature. The sticking coefficient of the Ge is significantly increased by preparing the CaF{sub 2} surface with electron bombardment to remove the top layer of fluorine. For both the irradiated and nonirradiated cases, annealing of thin room-temperature-deposited films resulted in Ge island formation.},
doi = {10.1103/PhysRevB.41.8420},
url = {https://www.osti.gov/biblio/6836809},
journal = {Physical Review, B: Condensed Matter; (USA)},
issn = {0163-1829},
number = ,
volume = 41:12,
place = {United States},
year = {Sun Apr 15 00:00:00 EDT 1990},
month = {Sun Apr 15 00:00:00 EDT 1990}
}