Highly efficient pseudomorphic InGaAs/GaAs/AlGaAs single quantum well lasers for monolithic integration

Journal Article · Mon Apr 30 00:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103106· OSTI ID:6834089

Larsson, A; Cody, J; Forouhar, S; Lang, R J ^[1]

---

1. Center for Space Microelectronics Technology, Jet Propulsion Laboratory California Institute of Technology, 4800 Oak Grove Drive, Pasadena, California 91109 (USA)

Highly efficient ridge waveguide pseudomorphic single quantum well lasers, emitting at 980 nm, have been fabricated from an In{sub 0.2}Ga{sub 0.8}As/GaAs/AlGaAs graded-index separate confinement heterostructure grown by molecular beam epitaxy. The lateral index guiding provided by the ridge reduces the anomalously large lateral loss of optical power found in gain-guided structures, thereby reducing the internal loss by more than 50%. The low threshold current (7.6 mA) and high differential quantum efficiency (79%) obtained under continuous operation as well as the transparency of the GaAs substrate to the emitted radiation render these lasers attractive for GaAs-based optoelectronic integration.

• OSTI ID: 6834089
• Journal Information: Applied Physics Letters; (USA), Vol. 56:18; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
FABRICATION
QUANTUM EFFICIENCY
ALUMINIUM ARSENIDES
GALLIUM ARSENIDES
INDIUM ARSENIDES
MOLECULAR BEAM EPITAXY
OPERATION
POWER LOSSES
THRESHOLD CURRENT
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
EFFICIENCY
ELECTRIC CURRENTS
ENERGY LOSSES
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LASERS
LOSSES
PNICTIDES
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
426002* - Engineering- Lasers & Masers- (1990-)