Defect chemical explanation for the effect of air anneal on CdS/CuInSe/sub 2/ solar cell performance

Journal Article · Mon Feb 06 00:00:00 EST 1989 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100930· OSTI ID:6832470

Cahen, D; Noufi, R

We formulate a consistent defect chemical model of the effect of air/O/sub 2/ anneals on CdS/CuInSe/sub 2/ devices. The model centers on O-induced neutralization of (near) surface donor states in CuInSe/sub 2/ grains. The simplest identification of these states is with ionized Se vacancies, due to coordinatively unsaturated In on grain surfaces and boundaries.

• Research Organization: Structural Chemistry Department, Weizmann Institute of Science, Rehovot 76100, Israel
• OSTI ID: 6832470
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 54:6
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
CADMIUM SULFIDE SOLAR CELLS
CRYSTAL DEFECTS
PERFORMANCE
COPPER SELENIDE SOLAR CELLS
INDIUM SELENIDE SOLAR CELLS
ANNEALING
GRAIN BOUNDARIES
VACANCIES
CRYSTAL STRUCTURE
DIRECT ENERGY CONVERTERS
EQUIPMENT
HEAT TREATMENTS
MICROSTRUCTURE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
POINT DEFECTS
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion
360602 - Other Materials- Structure & Phase Studies